Optimum Cu buffer layer thickness for growth of metal overlayers on Si(111)

Kjeld Pedersen; Thomas Brun Kristensen; Thomas Garm Pedersen; Thomas Jensen; Per Morgen; Zheshen Li; Søren V. Hoffmann

Optimum Cu buffer layer thickness for growth of metal overlayers on Si(111)

Kjeld Pedersen, Thomas Brun Kristensen, Thomas Garm Pedersen, Thomas Jensen, Per Morgen, Zheshen Li, Søren V. Hoffmann

Det Ingeniør- og Naturvidenskabelige Fakultet

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

Originalsprog	Engelsk
Tidsskrift	Physical Review B
Vol/bind	66
Udgave nummer	15
Sider (fra-til)	153406
ISSN	0163-1829
Status	Udgivet - 2002

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Citationsformater

@article{06f580309c2f11db8ed6000ea68e967b,

title = "Optimum Cu buffer layer thickness for growth of metal overlayers on Si(111)",

author = "Kjeld Pedersen and Kristensen, {Thomas Brun} and Pedersen, {Thomas Garm} and Thomas Jensen and Per Morgen and Zheshen Li and Hoffmann, {S{\o}ren V.}",

year = "2002",

language = "English",

volume = "66",

pages = "153406",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "15",

}

TY - JOUR

T1 - Optimum Cu buffer layer thickness for growth of metal overlayers on Si(111)

AU - Pedersen, Kjeld

AU - Kristensen, Thomas Brun

AU - Pedersen, Thomas Garm

AU - Jensen, Thomas

AU - Morgen, Per

AU - Li, Zheshen

AU - Hoffmann, Søren V.

PY - 2002

Y1 - 2002

M3 - Journal article

SN - 0163-1829

VL - 66

SP - 153406

JO - Physical Review B

JF - Physical Review B

IS - 15

ER -