Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz

Unnikrishnan Raveendran Nair, Stig Munk-Nielsen, Asger Bjørn Jørgensen

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

1 Citation (Scopus)

Resumé

Wide bandgap (WBG) power electronic devices realized using silicon carbide(SiC) and gallium nitride (GaN) are increasingly replacing their silicon(Si) counterparts in power electronics applications. The obvious advantages of these devices with their higher switching speeds, lower on state resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap devices. The low gate charge requirements of SiC MOSFETs enables use of these devices in radio frequency (RF) converters using resonant topologies operating at MHz frequency range. The RF converters employed in various industrial applications are currently realized with vacuum tubes. Replacing vacuum tubes with solid state devices provides greater reliability. This requires power switches transferring high power at high switching speeds. Wide bandgap devices operating at these specifications are not commercially available and power modules have to be custom designed for these applications. This work demonstrates performance of various commercial MOSFET packages at frequency of 2.56 MHz. Commercial SiC MOSFETs in TO-247 and D2Pak packs are tested in Class E resonant converter operating at 2.56 MHz and compared with DE-275 Radio Frequency (RF) package performance under same operating conditions. Design considerations deduced from results can then be used in design of custom low voltage SiC RF modules and eventually can be used in the design of high voltage modules.
OriginalsprogEngelsk
TitelProceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
Antal sider9
ForlagIEEE Press
Publikationsdatosep. 2017
ISBN (Elektronisk)978-90-75815-27-6
DOI
StatusUdgivet - sep. 2017
Begivenhed2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw, Polen
Varighed: 11 sep. 201714 sep. 2017

Konference

Konference2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
LandPolen
ByWarsaw
Periode11/09/201714/09/2017

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Silicon carbide
Electron tubes
Frequency converters
Energy gap
Power electronics
Solid state devices
High temperature operations
Silicon
Gallium nitride
Electric potential
Industrial applications
Switches
Topology
Specifications

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    Citer dette

    Nair, U. R., Munk-Nielsen, S., & Jørgensen, A. B. (2017). Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz. I Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) IEEE Press. https://doi.org/10.23919/EPE17ECCEEurope.2017.8099082
    Nair, Unnikrishnan Raveendran ; Munk-Nielsen, Stig ; Jørgensen, Asger Bjørn. / Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz. Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) . IEEE Press, 2017.
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    title = "Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz",
    abstract = "Wide bandgap (WBG) power electronic devices realized using silicon carbide(SiC) and gallium nitride (GaN) are increasingly replacing their silicon(Si) counterparts in power electronics applications. The obvious advantages of these devices with their higher switching speeds, lower on state resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap devices. The low gate charge requirements of SiC MOSFETs enables use of these devices in radio frequency (RF) converters using resonant topologies operating at MHz frequency range. The RF converters employed in various industrial applications are currently realized with vacuum tubes. Replacing vacuum tubes with solid state devices provides greater reliability. This requires power switches transferring high power at high switching speeds. Wide bandgap devices operating at these specifications are not commercially available and power modules have to be custom designed for these applications. This work demonstrates performance of various commercial MOSFET packages at frequency of 2.56 MHz. Commercial SiC MOSFETs in TO-247 and D2Pak packs are tested in Class E resonant converter operating at 2.56 MHz and compared with DE-275 Radio Frequency (RF) package performance under same operating conditions. Design considerations deduced from results can then be used in design of custom low voltage SiC RF modules and eventually can be used in the design of high voltage modules.",
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    Nair, UR, Munk-Nielsen, S & Jørgensen, AB 2017, Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz. i Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) . IEEE Press, Warsaw, Polen, 11/09/2017. https://doi.org/10.23919/EPE17ECCEEurope.2017.8099082

    Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz. / Nair, Unnikrishnan Raveendran; Munk-Nielsen, Stig; Jørgensen, Asger Bjørn.

    Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) . IEEE Press, 2017.

    Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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    AU - Nair, Unnikrishnan Raveendran

    AU - Munk-Nielsen, Stig

    AU - Jørgensen, Asger Bjørn

    PY - 2017/9

    Y1 - 2017/9

    N2 - Wide bandgap (WBG) power electronic devices realized using silicon carbide(SiC) and gallium nitride (GaN) are increasingly replacing their silicon(Si) counterparts in power electronics applications. The obvious advantages of these devices with their higher switching speeds, lower on state resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap devices. The low gate charge requirements of SiC MOSFETs enables use of these devices in radio frequency (RF) converters using resonant topologies operating at MHz frequency range. The RF converters employed in various industrial applications are currently realized with vacuum tubes. Replacing vacuum tubes with solid state devices provides greater reliability. This requires power switches transferring high power at high switching speeds. Wide bandgap devices operating at these specifications are not commercially available and power modules have to be custom designed for these applications. This work demonstrates performance of various commercial MOSFET packages at frequency of 2.56 MHz. Commercial SiC MOSFETs in TO-247 and D2Pak packs are tested in Class E resonant converter operating at 2.56 MHz and compared with DE-275 Radio Frequency (RF) package performance under same operating conditions. Design considerations deduced from results can then be used in design of custom low voltage SiC RF modules and eventually can be used in the design of high voltage modules.

    AB - Wide bandgap (WBG) power electronic devices realized using silicon carbide(SiC) and gallium nitride (GaN) are increasingly replacing their silicon(Si) counterparts in power electronics applications. The obvious advantages of these devices with their higher switching speeds, lower on state resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap devices. The low gate charge requirements of SiC MOSFETs enables use of these devices in radio frequency (RF) converters using resonant topologies operating at MHz frequency range. The RF converters employed in various industrial applications are currently realized with vacuum tubes. Replacing vacuum tubes with solid state devices provides greater reliability. This requires power switches transferring high power at high switching speeds. Wide bandgap devices operating at these specifications are not commercially available and power modules have to be custom designed for these applications. This work demonstrates performance of various commercial MOSFET packages at frequency of 2.56 MHz. Commercial SiC MOSFETs in TO-247 and D2Pak packs are tested in Class E resonant converter operating at 2.56 MHz and compared with DE-275 Radio Frequency (RF) package performance under same operating conditions. Design considerations deduced from results can then be used in design of custom low voltage SiC RF modules and eventually can be used in the design of high voltage modules.

    KW - High frequency power converter

    KW - Resonant converter

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    KW - Wide bandgap devices

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    DO - 10.23919/EPE17ECCEEurope.2017.8099082

    M3 - Article in proceeding

    BT - Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

    PB - IEEE Press

    ER -

    Nair UR, Munk-Nielsen S, Jørgensen AB. Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz. I Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) . IEEE Press. 2017 https://doi.org/10.23919/EPE17ECCEEurope.2017.8099082