Power cycling test of a 650 V discrete GaN-on-Si power device with a laminated packaging embedding technology

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

3 Citationer (Scopus)

Resumé

A GaN-on-Si power device is a strong candidate to replace power components based on silicon in high-end market for low-voltage applications, thanks to its electrical characteristics. To maximize opportunities of the GaN device in field applications, a package technology plays an important role in a discrete GaN power device. A few specialized package technologies having very lower stray inductance and higher thermal conductivity have been proposed for discrete GaN-on-Si power devices. Despite their superior performance, there has been little discussion of their reliability. The paper presents a power cycling test of a discrete GaN power device employing a laminated embedded packaging technology subjected to 125 degrees Celsius junction temperature swing. Failure modes are described with collected electrical characteristics and measured temperature data under the test. In conclusion, physical degradation of a solder layer between a tested discrete chip and an aluminum print circuit board is represented by a scanning acoustic microscope and a scanning electron microscope. A drain-to-source leakage current increase after the failure is reported in resemblance with previous studies.
OriginalsprogEngelsk
TitelProceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)
Antal sider6
ForlagIEEE Press
Publikationsdatookt. 2017
Sider2540-2545
ISBN (Elektronisk)978-1-5090-2998-3
DOI
StatusUdgivet - okt. 2017
Begivenhed2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, Ohio, USA
Varighed: 1 okt. 20175 okt. 2017

Konference

Konference2017 IEEE Energy Conversion Congress and Exposition (ECCE)
LandUSA
ByCincinnati, Ohio
Periode01/10/201705/10/2017

Fingerprint

Packaging
Acoustic microscopes
Scanning
Leakage currents
Inductance
Soldering alloys
Failure modes
Thermal conductivity
Electron microscopes
Aluminum
Degradation
Silicon
Temperature
Networks (circuits)
Electric potential

Citer dette

@inproceedings{04716830ce11414ea61ca40f8919cc78,
title = "Power cycling test of a 650 V discrete GaN-on-Si power device with a laminated packaging embedding technology",
abstract = "A GaN-on-Si power device is a strong candidate to replace power components based on silicon in high-end market for low-voltage applications, thanks to its electrical characteristics. To maximize opportunities of the GaN device in field applications, a package technology plays an important role in a discrete GaN power device. A few specialized package technologies having very lower stray inductance and higher thermal conductivity have been proposed for discrete GaN-on-Si power devices. Despite their superior performance, there has been little discussion of their reliability. The paper presents a power cycling test of a discrete GaN power device employing a laminated embedded packaging technology subjected to 125 degrees Celsius junction temperature swing. Failure modes are described with collected electrical characteristics and measured temperature data under the test. In conclusion, physical degradation of a solder layer between a tested discrete chip and an aluminum print circuit board is represented by a scanning acoustic microscope and a scanning electron microscope. A drain-to-source leakage current increase after the failure is reported in resemblance with previous studies.",
keywords = "Gallium nitride, GaN-on-Si, Power cycling, Reliability, Failure mechanism, Laminated packaging embedding technology, Solder delamination",
author = "Sungyoung Song and Stig Munk-Nielsen and Christian Uhrenfeldt and Kjeld Pedersen",
year = "2017",
month = "10",
doi = "10.1109/ECCE.2017.8096483",
language = "English",
pages = "2540--2545",
booktitle = "Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)",
publisher = "IEEE Press",

}

Song, S, Munk-Nielsen, S, Uhrenfeldt, C & Pedersen, K 2017, Power cycling test of a 650 V discrete GaN-on-Si power device with a laminated packaging embedding technology. i Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, s. 2540-2545, Cincinnati, Ohio, USA, 01/10/2017. https://doi.org/10.1109/ECCE.2017.8096483

Power cycling test of a 650 V discrete GaN-on-Si power device with a laminated packaging embedding technology. / Song, Sungyoung; Munk-Nielsen, Stig; Uhrenfeldt, Christian; Pedersen, Kjeld.

Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2017. s. 2540-2545.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

TY - GEN

T1 - Power cycling test of a 650 V discrete GaN-on-Si power device with a laminated packaging embedding technology

AU - Song, Sungyoung

AU - Munk-Nielsen, Stig

AU - Uhrenfeldt, Christian

AU - Pedersen, Kjeld

PY - 2017/10

Y1 - 2017/10

N2 - A GaN-on-Si power device is a strong candidate to replace power components based on silicon in high-end market for low-voltage applications, thanks to its electrical characteristics. To maximize opportunities of the GaN device in field applications, a package technology plays an important role in a discrete GaN power device. A few specialized package technologies having very lower stray inductance and higher thermal conductivity have been proposed for discrete GaN-on-Si power devices. Despite their superior performance, there has been little discussion of their reliability. The paper presents a power cycling test of a discrete GaN power device employing a laminated embedded packaging technology subjected to 125 degrees Celsius junction temperature swing. Failure modes are described with collected electrical characteristics and measured temperature data under the test. In conclusion, physical degradation of a solder layer between a tested discrete chip and an aluminum print circuit board is represented by a scanning acoustic microscope and a scanning electron microscope. A drain-to-source leakage current increase after the failure is reported in resemblance with previous studies.

AB - A GaN-on-Si power device is a strong candidate to replace power components based on silicon in high-end market for low-voltage applications, thanks to its electrical characteristics. To maximize opportunities of the GaN device in field applications, a package technology plays an important role in a discrete GaN power device. A few specialized package technologies having very lower stray inductance and higher thermal conductivity have been proposed for discrete GaN-on-Si power devices. Despite their superior performance, there has been little discussion of their reliability. The paper presents a power cycling test of a discrete GaN power device employing a laminated embedded packaging technology subjected to 125 degrees Celsius junction temperature swing. Failure modes are described with collected electrical characteristics and measured temperature data under the test. In conclusion, physical degradation of a solder layer between a tested discrete chip and an aluminum print circuit board is represented by a scanning acoustic microscope and a scanning electron microscope. A drain-to-source leakage current increase after the failure is reported in resemblance with previous studies.

KW - Gallium nitride

KW - GaN-on-Si

KW - Power cycling

KW - Reliability

KW - Failure mechanism

KW - Laminated packaging embedding technology

KW - Solder delamination

U2 - 10.1109/ECCE.2017.8096483

DO - 10.1109/ECCE.2017.8096483

M3 - Article in proceeding

SP - 2540

EP - 2545

BT - Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - IEEE Press

ER -