Abstract
In this paper, the power electronics topology and semiconductor selection for low voltage (115 $\text{V}_{\text{RMS}}$ phase voltage) and medium power (90 kW) DC/AC applications are presented. Since these special power electronic applications require a low phase voltage, the phase current is consequently higher. The higher current is shown to limit the maximum achievable efficiency compared to an industry standard 230 V converter, even though lower voltage rated semiconductors can be used for the 115 V converter. To explore a suitable topology for this special DC/AC converter application, a 2-level Si IGBT and a 2-level SiC MOSFET converter are compared to industry standard 3-level Si topologies using market available semiconductors. The comparison is realised using semiconductor loss models, and a comparatively LC filter loss model. The applied IGBT loss model is verified with a double pulse test (DPT) setup and finally, besides highlighting the suitable topology using a figure of merit and suitable semiconductor type, the advantage of utilizing an interleaving configuration is discussed for IGBT-based converters.
Originalsprog | Engelsk |
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Titel | Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) |
Antal sider | 10 |
Udgivelsessted | Italy |
Forlag | IEEE Press |
Publikationsdato | sep. 2019 |
Artikelnummer | 8915421 |
ISBN (Trykt) | 978-1-7281-2361-5 |
ISBN (Elektronisk) | 978-9-0758-1531-3 |
DOI | |
Status | Udgivet - sep. 2019 |
Begivenhed | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italien Varighed: 3 sep. 2019 → 5 sep. 2019 |
Konference
Konference | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) |
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Land/Område | Italien |
By | Genova |
Periode | 03/09/2019 → 05/09/2019 |