Radiation-Pattern Reconfigurable Phased Array with p-i-n Diodes Controlled for 5G Mobile Terminals

Jin Zhang, Shuai Zhang, Zhinong Ying, Arthur Morris, Gert Frølund Pedersen

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Abstrakt

A p-i-n diodes-controlled radiation-pattern reconfigurable phased array for fifth-generation (5G) handsets is proposed in this article. The proposed beam scanning and switching hybrid system can significantly reduce the number of arrays and transmit-receive (TR) components when compared with multiarray systems while keeping the same spatial coverage. The array has wide working band from 24 to 27.5 GHz, which can cover the allocated 5G band for Europe. The four-element array is planar with a small clearance of only 4 mm, which is suitable for most of the current mobile phones. Each reconfigurable array element is fed by one shielded stripline and has three switchable radiation patterns: two broadside directions and one endfire direction. The beam switching is realized by applying two reconfigurable directors on both sides of the dipole, which also reduces the antenna profile. The directors are activated when the p-i-n diodes are at OFF mode, which minimizes the energy loss on the p-i-n diodes. The parasitic influence of the p-i-n diodes, the soldering process, and mobile environment are discussed in detail. The measured results show good agreement with the simulations.

OriginalsprogEngelsk
Artikelnummer8922887
TidsskriftI E E E Transactions on Microwave Theory and Techniques
Vol/bind68
Udgave nummer3
Sider (fra-til)1103-1117
Antal sider15
ISSN0018-9480
DOI
StatusUdgivet - mar. 2020

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