TY - JOUR
T1 - Reliability analysis of sintered Cu joints for SiC power devices under thermal shock condition
AU - Gao, Yue
AU - Takata, Shuhei
AU - Chen, Chuantong
AU - Nagao, Shijo
AU - Suganuma, Katsuaki
AU - Bahman, Amir Sajjad
AU - Iannuzzo, Francesco
PY - 2019/9
Y1 - 2019/9
N2 - In this study, the thermal shock reliability of sintered Cu joints on SiC power device application was investigated. Firstly, sintered Cu joints were used to bond chips and substrate consisting of various materials to evaluate their bondability. Secondly, SiC dummy chips were bonded to DBC substrate and thermal shock test from −40 °C to 250 °C were performed both in the ambient atmosphere and in vacuum. Finally, the SiC MOSFETs bonded by sintered Cu joints were evaluated by power cycle test from 25 °C to 200 °C and the thermal conductivity was evaluated by T3ster equipment. The results showed the sintered Cu exhibited extremely high reliability during the thermal shock aging test in ambient atmosphere although inferior reliability was observed in vacuum. This phenomenon was investigated and explained by field-emission scanning microscope, energy-dispersive X-ray spectroscopy, and X-ray diffractometer.
AB - In this study, the thermal shock reliability of sintered Cu joints on SiC power device application was investigated. Firstly, sintered Cu joints were used to bond chips and substrate consisting of various materials to evaluate their bondability. Secondly, SiC dummy chips were bonded to DBC substrate and thermal shock test from −40 °C to 250 °C were performed both in the ambient atmosphere and in vacuum. Finally, the SiC MOSFETs bonded by sintered Cu joints were evaluated by power cycle test from 25 °C to 200 °C and the thermal conductivity was evaluated by T3ster equipment. The results showed the sintered Cu exhibited extremely high reliability during the thermal shock aging test in ambient atmosphere although inferior reliability was observed in vacuum. This phenomenon was investigated and explained by field-emission scanning microscope, energy-dispersive X-ray spectroscopy, and X-ray diffractometer.
UR - http://www.scopus.com/inward/record.url?scp=85074498718&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2019.113456
DO - 10.1016/j.microrel.2019.113456
M3 - Journal article
AN - SCOPUS:85074498718
SN - 0026-2714
VL - 100-101
JO - Microelectronics Reliability
JF - Microelectronics Reliability
M1 - 113456
ER -