Reliability analysis of sintered Cu joints under power cycle condition

Yue Gao; Chuantong Chen; Shijo Nagao; Katsuaki Suganuma; Amir Sajjad Bahman; Francesco Iannuzzo

doi:10.1109/ICEPT47577.2019.245323

Reliability analysis of sintered Cu joints under power cycle condition

Yue Gao, Chuantong Chen, Shijo Nagao, Katsuaki Suganuma, Amir Sajjad Bahman, Francesco Iannuzzo

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

Abstract

A Cu particles paste was developed as a candidate of die attach materials for next generation power devices. The evaluation including thermal shock and power cycling test were performed on SiC-DBC die-attach structure to test the reliability of sintered Cu joints. The thermal shock reliability of SiC die-attached on a DBC substrate was carried out from -50 °C to 250 °C in the ambient atmosphere. SiC MOSFETs bonded by the Cu paste were evaluated by power cycle test from 25 °C to 200 °C. In both test condition, the sintered Cu joints showed good stability. The shear strength increased with the thermal shock cycles increased, which can be attributed to Cu oxidation during test. The power cycle test also showed no obvious deterioration occurred.

Originalsprog	Engelsk
Titel	2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019
Forlag	IEEE
Publikationsdato	aug. 2019
Artikelnummer	9081076
ISBN (Elektronisk)	9781728150642
DOI	https://doi.org/10.1109/ICEPT47577.2019.245323
Status	Udgivet - aug. 2019
Begivenhed	20th International Conference on Electronic Packaging Technology, ICEPT 2019 - Hong Kong, Kina Varighed: 12 aug. 2019 → 15 aug. 2019

Konference

Konference	20th International Conference on Electronic Packaging Technology, ICEPT 2019
Land/Område	Kina
By	Hong Kong
Periode	12/08/2019 → 15/08/2019

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10.1109/ICEPT47577.2019.245323

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@inproceedings{5c373e560e8f491686bc78ff3b162255,

title = "Reliability analysis of sintered Cu joints under power cycle condition",

abstract = "A Cu particles paste was developed as a candidate of die attach materials for next generation power devices. The evaluation including thermal shock and power cycling test were performed on SiC-DBC die-attach structure to test the reliability of sintered Cu joints. The thermal shock reliability of SiC die-attached on a DBC substrate was carried out from -50 °C to 250 °C in the ambient atmosphere. SiC MOSFETs bonded by the Cu paste were evaluated by power cycle test from 25 °C to 200 °C. In both test condition, the sintered Cu joints showed good stability. The shear strength increased with the thermal shock cycles increased, which can be attributed to Cu oxidation during test. The power cycle test also showed no obvious deterioration occurred.",

keywords = "Power cycle test, Power devices packaging, Sintered Cu joints, Thermal shock test",

author = "Yue Gao and Chuantong Chen and Shijo Nagao and Katsuaki Suganuma and Bahman, {Amir Sajjad} and Francesco Iannuzzo",

note = "Funding Information: This work was partly supported by the JST Advanced Low Carbon Technology Research and Development Program (ALCA) project Development of a high frequency GaN power module package technology (Grant No. JPMJAL1610) and the International Research Promotion Program (IRPR) of Osaka University. The authors also appreciate the assistance from Danfoss. Co.,Ltd (Germany) for supplying materials Funding Information: This work was partly supported by the JST Advanced Low Carbon Technology Research and Development Program (ALCA) project “Development of a high frequency GaN power module package technology” (Grant No. JPMJAL1610) and the International Research Promotion Program (IRPR) of Osaka University. The authors also appreciate the assistance from Danfoss. Co.,Ltd (Germany) for supplying materials. Publisher Copyright: {\textcopyright} 2019 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 20th International Conference on Electronic Packaging Technology, ICEPT 2019 ; Conference date: 12-08-2019 Through 15-08-2019",

year = "2019",

month = aug,

doi = "10.1109/ICEPT47577.2019.245323",

language = "English",

booktitle = "2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019",

publisher = "IEEE",

address = "United States",

}

Gao, Y, Chen, C, Nagao, S, Suganuma, K, Bahman, AS & Iannuzzo, F 2019, Reliability analysis of sintered Cu joints under power cycle condition. i 2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019., 9081076, IEEE, 20th International Conference on Electronic Packaging Technology, ICEPT 2019, Hong Kong, Kina, 12/08/2019. https://doi.org/10.1109/ICEPT47577.2019.245323

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T1 - Reliability analysis of sintered Cu joints under power cycle condition

AU - Gao, Yue

AU - Chen, Chuantong

AU - Nagao, Shijo

AU - Suganuma, Katsuaki

AU - Bahman, Amir Sajjad

AU - Iannuzzo, Francesco

N1 - Funding Information: This work was partly supported by the JST Advanced Low Carbon Technology Research and Development Program (ALCA) project Development of a high frequency GaN power module package technology (Grant No. JPMJAL1610) and the International Research Promotion Program (IRPR) of Osaka University. The authors also appreciate the assistance from Danfoss. Co.,Ltd (Germany) for supplying materials Funding Information: This work was partly supported by the JST Advanced Low Carbon Technology Research and Development Program (ALCA) project “Development of a high frequency GaN power module package technology” (Grant No. JPMJAL1610) and the International Research Promotion Program (IRPR) of Osaka University. The authors also appreciate the assistance from Danfoss. Co.,Ltd (Germany) for supplying materials. Publisher Copyright: © 2019 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2019/8

Y1 - 2019/8

N2 - A Cu particles paste was developed as a candidate of die attach materials for next generation power devices. The evaluation including thermal shock and power cycling test were performed on SiC-DBC die-attach structure to test the reliability of sintered Cu joints. The thermal shock reliability of SiC die-attached on a DBC substrate was carried out from -50 °C to 250 °C in the ambient atmosphere. SiC MOSFETs bonded by the Cu paste were evaluated by power cycle test from 25 °C to 200 °C. In both test condition, the sintered Cu joints showed good stability. The shear strength increased with the thermal shock cycles increased, which can be attributed to Cu oxidation during test. The power cycle test also showed no obvious deterioration occurred.

AB - A Cu particles paste was developed as a candidate of die attach materials for next generation power devices. The evaluation including thermal shock and power cycling test were performed on SiC-DBC die-attach structure to test the reliability of sintered Cu joints. The thermal shock reliability of SiC die-attached on a DBC substrate was carried out from -50 °C to 250 °C in the ambient atmosphere. SiC MOSFETs bonded by the Cu paste were evaluated by power cycle test from 25 °C to 200 °C. In both test condition, the sintered Cu joints showed good stability. The shear strength increased with the thermal shock cycles increased, which can be attributed to Cu oxidation during test. The power cycle test also showed no obvious deterioration occurred.

KW - Power cycle test

KW - Power devices packaging

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M3 - Article in proceeding

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BT - 2019 20th International Conference on Electronic Packaging Technology, ICEPT 2019

PB - IEEE

T2 - 20th International Conference on Electronic Packaging Technology, ICEPT 2019

Y2 - 12 August 2019 through 15 August 2019

ER -

Reliability analysis of sintered Cu joints under power cycle condition

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