TY - JOUR
T1 - Reliability Improvement of Power Converters by Means of Condition Monitoring of IGBT Modules
AU - Choi, Ui Min
AU - Blaabjerg, Frede
AU - Jørgensen, S.
AU - Munk-Nielsen, Stig
AU - Rannestad, Bjorn
PY - 2017/10
Y1 - 2017/10
N2 - Power electronic systems have gradually gained an important status in a wide range of industrial applications such as renewable generation, motor drives, automotive, and railway transportation. Accordingly, recent research makes an effort to improve the reliability of power electronic systems to comply with more stringent constraints on safety, cost, and availability. The power devices are one of the most reliability-critical components in power electronic systems. Therefore, its condition monitoring plays an important role to improve the reliability of power electronic systems. This paper proposes a condition monitoring method of insulated-gate bipolar transistor (IGBT) modules. In the first section of this paper, a structure of a conventional IGBT module and a related parameter for the condition monitoring are explained. Then, a proposed real-time on-state collector-emitter voltage measurement circuit and condition monitoring strategies under different operating conditions are described. Finally, experimental results confirm the feasibility and effectiveness of the proposed method.
AB - Power electronic systems have gradually gained an important status in a wide range of industrial applications such as renewable generation, motor drives, automotive, and railway transportation. Accordingly, recent research makes an effort to improve the reliability of power electronic systems to comply with more stringent constraints on safety, cost, and availability. The power devices are one of the most reliability-critical components in power electronic systems. Therefore, its condition monitoring plays an important role to improve the reliability of power electronic systems. This paper proposes a condition monitoring method of insulated-gate bipolar transistor (IGBT) modules. In the first section of this paper, a structure of a conventional IGBT module and a related parameter for the condition monitoring are explained. Then, a proposed real-time on-state collector-emitter voltage measurement circuit and condition monitoring strategies under different operating conditions are described. Finally, experimental results confirm the feasibility and effectiveness of the proposed method.
KW - Condition monitoring
KW - IGBT module
KW - Insulated-gate bipolar transistor (IGBT)
KW - Power converter
KW - Reliability
KW - Wear-out failure
UR - http://www.scopus.com/inward/record.url?scp=85019480010&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2016.2633578
DO - 10.1109/TPEL.2016.2633578
M3 - Journal article
AN - SCOPUS:85019480010
SN - 0885-8993
VL - 32
SP - 7990
EP - 7997
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 10
M1 - 7762929
ER -