@inproceedings{129df53bd9c04b239e7d6ae76cc8dc3b,
title = "Self-sustained Oscillation of Superjunction MOSFET Intrinsic Diode During Reverse Recovery Transient",
abstract = "In this paper, the self-sustained oscillation occurs on the reverse recovery transient of the superjunction MOSFET intrinsic diode is studied. Based on the double-pulse test, the characteristics of the self-sustained oscillation is identified. Utilizing the Senturus TCAD simulation, the superjunction MOSFET intrinsic diode's reverse recovery oscillation behavior is reproduced. By analyzing the oscillation waveforms, the positive feedback mechanism which excites the oscillation is revealed at the end of the paper.",
keywords = "MOSFET, oscillations, semiconductor diodes, technology CAD (electronics), superjunction MOSFET intrinsic diode, reverse recovery transient, double-pulse test, oscillation waveforms, self-sustained oscillation, Senturus TCAD simulation, Oscillators, Logic gates, Semiconductor diodes, Integrated circuit modeling, Inductance, Threshold voltage, SuperJunction MOSFET, MOSFET intrinsic diode, reverse recovery",
author = "P. Xue and L. Maresca and M. Riccio and G. Breglio and A. Irace",
year = "2019",
doi = "10.1109/ISPSD.2019.8757579",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
pages = "315--318",
booktitle = "2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)",
publisher = "IEEE",
address = "United States",
note = "31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 ; Conference date: 19-05-2019 Through 23-05-2019",
}