Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

Emanuel-Petre Eni, Szymon Beczkowski, Stig Munk-Nielsen, Tamas Kerekes, Remus Teodorescu, Raghavendra Rao Juluri, Brian Julsgaard, Edward VanBrunt, Brett Hull, Shadi Sabri, David Grider, Christian Uhrenfeldt

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

14 Citationer (Scopus)

Resumé

The short-circuit behavior of power devices is highly relevant for converter design and fault protection. In this work, the degradation during short-circuit of a 10 kV 10 A 4H-SiC MOSFET is investigated at 6 kV DC-link voltage. The study aims to present the behavior of the device during short-circuit transients as it sustains increasing short-circuit pulses during its life-time. As the short-circuit pulse length increases, degradation of the device can be observed in periodically performed characterizations. The initial degradation seems to be associated with the channel region, and continuous stressing leads to an overall increase in device on-state resistance at the end of the degradation study. Thermal simulation show that the surface aluminum metalization reached its melting temperature and the top part of the device reaches temperatures above the rated junction temperature. Scanning electron microscope (SEM) investigation shows aluminum reconstruction and cavities at the contact interface between the aluminum surface metalization and source contacts.
OriginalsprogEngelsk
TidsskriftI E E E Transactions on Power Electronics
Vol/bind32
Udgave nummer12
Sider (fra-til)9342 - 9354
Antal sider13
ISSN0885-8993
DOI
StatusUdgivet - dec. 2017

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Short circuit currents
Degradation
Aluminum
Melting point
Electron microscopes
Scanning
Temperature
Electric potential

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    Eni, Emanuel-Petre ; Beczkowski, Szymon ; Munk-Nielsen, Stig ; Kerekes, Tamas ; Teodorescu, Remus ; Juluri, Raghavendra Rao ; Julsgaard, Brian ; VanBrunt, Edward ; Hull, Brett ; Sabri, Shadi ; Grider, David ; Uhrenfeldt, Christian. / Short-Circuit Degradation of 10-kV 10-A SiC MOSFET. I: I E E E Transactions on Power Electronics. 2017 ; Bind 32, Nr. 12. s. 9342 - 9354 .
    @article{7e5ec4e593d5406db8b9373d1770694f,
    title = "Short-Circuit Degradation of 10-kV 10-A SiC MOSFET",
    abstract = "The short-circuit behavior of power devices is highly relevant for converter design and fault protection. In this work, the degradation during short-circuit of a 10 kV 10 A 4H-SiC MOSFET is investigated at 6 kV DC-link voltage. The study aims to present the behavior of the device during short-circuit transients as it sustains increasing short-circuit pulses during its life-time. As the short-circuit pulse length increases, degradation of the device can be observed in periodically performed characterizations. The initial degradation seems to be associated with the channel region, and continuous stressing leads to an overall increase in device on-state resistance at the end of the degradation study. Thermal simulation show that the surface aluminum metalization reached its melting temperature and the top part of the device reaches temperatures above the rated junction temperature. Scanning electron microscope (SEM) investigation shows aluminum reconstruction and cavities at the contact interface between the aluminum surface metalization and source contacts.",
    keywords = "Degradation, SiC MOSFET, Short-circuit",
    author = "Emanuel-Petre Eni and Szymon Beczkowski and Stig Munk-Nielsen and Tamas Kerekes and Remus Teodorescu and Juluri, {Raghavendra Rao} and Brian Julsgaard and Edward VanBrunt and Brett Hull and Shadi Sabri and David Grider and Christian Uhrenfeldt",
    year = "2017",
    month = "12",
    doi = "10.1109/TPEL.2017.2657754",
    language = "English",
    volume = "32",
    pages = "9342 -- 9354",
    journal = "I E E E Transactions on Power Electronics",
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    publisher = "IEEE",
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    }

    Short-Circuit Degradation of 10-kV 10-A SiC MOSFET. / Eni, Emanuel-Petre; Beczkowski, Szymon; Munk-Nielsen, Stig; Kerekes, Tamas; Teodorescu, Remus; Juluri, Raghavendra Rao; Julsgaard, Brian; VanBrunt, Edward; Hull, Brett; Sabri, Shadi; Grider, David; Uhrenfeldt, Christian.

    I: I E E E Transactions on Power Electronics, Bind 32, Nr. 12, 12.2017, s. 9342 - 9354 .

    Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

    TY - JOUR

    T1 - Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

    AU - Eni, Emanuel-Petre

    AU - Beczkowski, Szymon

    AU - Munk-Nielsen, Stig

    AU - Kerekes, Tamas

    AU - Teodorescu, Remus

    AU - Juluri, Raghavendra Rao

    AU - Julsgaard, Brian

    AU - VanBrunt, Edward

    AU - Hull, Brett

    AU - Sabri, Shadi

    AU - Grider, David

    AU - Uhrenfeldt, Christian

    PY - 2017/12

    Y1 - 2017/12

    N2 - The short-circuit behavior of power devices is highly relevant for converter design and fault protection. In this work, the degradation during short-circuit of a 10 kV 10 A 4H-SiC MOSFET is investigated at 6 kV DC-link voltage. The study aims to present the behavior of the device during short-circuit transients as it sustains increasing short-circuit pulses during its life-time. As the short-circuit pulse length increases, degradation of the device can be observed in periodically performed characterizations. The initial degradation seems to be associated with the channel region, and continuous stressing leads to an overall increase in device on-state resistance at the end of the degradation study. Thermal simulation show that the surface aluminum metalization reached its melting temperature and the top part of the device reaches temperatures above the rated junction temperature. Scanning electron microscope (SEM) investigation shows aluminum reconstruction and cavities at the contact interface between the aluminum surface metalization and source contacts.

    AB - The short-circuit behavior of power devices is highly relevant for converter design and fault protection. In this work, the degradation during short-circuit of a 10 kV 10 A 4H-SiC MOSFET is investigated at 6 kV DC-link voltage. The study aims to present the behavior of the device during short-circuit transients as it sustains increasing short-circuit pulses during its life-time. As the short-circuit pulse length increases, degradation of the device can be observed in periodically performed characterizations. The initial degradation seems to be associated with the channel region, and continuous stressing leads to an overall increase in device on-state resistance at the end of the degradation study. Thermal simulation show that the surface aluminum metalization reached its melting temperature and the top part of the device reaches temperatures above the rated junction temperature. Scanning electron microscope (SEM) investigation shows aluminum reconstruction and cavities at the contact interface between the aluminum surface metalization and source contacts.

    KW - Degradation

    KW - SiC MOSFET

    KW - Short-circuit

    U2 - 10.1109/TPEL.2017.2657754

    DO - 10.1109/TPEL.2017.2657754

    M3 - Journal article

    VL - 32

    SP - 9342

    EP - 9354

    JO - I E E E Transactions on Power Electronics

    JF - I E E E Transactions on Power Electronics

    SN - 0885-8993

    IS - 12

    ER -