Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module

Claudiu Ionita , Muhammad Nawaz , Kalle Ilves , Francesco Iannuzzo

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

12 Citationer (Scopus)

Resumé

While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (VDC), gate resistance (Rg) and gate-source supply voltage (VGS) are varied systematically to investigate the effect of these parameters on the peak current and short-circuit energy. The peak current of the investigated module can be as high as 2.5 kA for VGS=20 V and does not depend significantly on the gate resistors used in this research. A safe operating area (SOA) is mapped at different VGS and pulse durations and for VDS=800 V, which is typically encountered in applications for devices of these ratings. Five modules were failed in total, with a critical short-circuit energy, Ecr ranging from 7.3 J to 9.7 J. The failure mechanism is generally the thermal runaway. Prior to failure, a decrease in VGS can be observed which is an indication of an increased gate-source leakage current. The results obtained in this experimental work show a good withstand capability of the modules to SC events. The experimental data obtained during this work gives an insight into the device behavior and limitations during SC events and can be used by gate driver designers to develop protection circuits.
OriginalsprogEngelsk
TitelProceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)
ForlagIEEE Press
Publikationsdatookt. 2017
ISBN (Elektronisk)978-1-5090-2998-3
DOI
StatusUdgivet - okt. 2017
Begivenhed2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, Ohio, USA
Varighed: 1 okt. 20175 okt. 2017

Konference

Konference2017 IEEE Energy Conversion Congress and Exposition (ECCE)
LandUSA
ByCincinnati, Ohio
Periode01/10/201705/10/2017

Fingerprint

Short circuit currents
Electric potential
Leakage currents
Resistors
Power MOSFET
Networks (circuits)

Citer dette

Ionita , C., Nawaz , M., Ilves , K., & Iannuzzo, F. (2017). Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module. I Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE) IEEE Press. https://doi.org/10.1109/ECCE.2017.8096399
Ionita , Claudiu ; Nawaz , Muhammad ; Ilves , Kalle ; Iannuzzo, Francesco. / Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module. Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2017.
@inproceedings{b565a713077642ccb7895a2e1cc9a903,
title = "Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module",
abstract = "While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (VDC), gate resistance (Rg) and gate-source supply voltage (VGS) are varied systematically to investigate the effect of these parameters on the peak current and short-circuit energy. The peak current of the investigated module can be as high as 2.5 kA for VGS=20 V and does not depend significantly on the gate resistors used in this research. A safe operating area (SOA) is mapped at different VGS and pulse durations and for VDS=800 V, which is typically encountered in applications for devices of these ratings. Five modules were failed in total, with a critical short-circuit energy, Ecr ranging from 7.3 J to 9.7 J. The failure mechanism is generally the thermal runaway. Prior to failure, a decrease in VGS can be observed which is an indication of an increased gate-source leakage current. The results obtained in this experimental work show a good withstand capability of the modules to SC events. The experimental data obtained during this work gives an insight into the device behavior and limitations during SC events and can be used by gate driver designers to develop protection circuits.",
keywords = "Power Modules, SiC MOSFET, Short-circuit, Safe Operating Area, Wide Bandgap",
author = "Claudiu Ionita and Muhammad Nawaz and Kalle Ilves and Francesco Iannuzzo",
year = "2017",
month = "10",
doi = "10.1109/ECCE.2017.8096399",
language = "English",
booktitle = "Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)",
publisher = "IEEE Press",

}

Ionita , C, Nawaz , M, Ilves , K & Iannuzzo, F 2017, Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module. i Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, Ohio, USA, 01/10/2017. https://doi.org/10.1109/ECCE.2017.8096399

Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module. / Ionita , Claudiu; Nawaz , Muhammad; Ilves , Kalle; Iannuzzo, Francesco.

Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2017.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

TY - GEN

T1 - Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module

AU - Ionita , Claudiu

AU - Nawaz , Muhammad

AU - Ilves , Kalle

AU - Iannuzzo, Francesco

PY - 2017/10

Y1 - 2017/10

N2 - While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (VDC), gate resistance (Rg) and gate-source supply voltage (VGS) are varied systematically to investigate the effect of these parameters on the peak current and short-circuit energy. The peak current of the investigated module can be as high as 2.5 kA for VGS=20 V and does not depend significantly on the gate resistors used in this research. A safe operating area (SOA) is mapped at different VGS and pulse durations and for VDS=800 V, which is typically encountered in applications for devices of these ratings. Five modules were failed in total, with a critical short-circuit energy, Ecr ranging from 7.3 J to 9.7 J. The failure mechanism is generally the thermal runaway. Prior to failure, a decrease in VGS can be observed which is an indication of an increased gate-source leakage current. The results obtained in this experimental work show a good withstand capability of the modules to SC events. The experimental data obtained during this work gives an insight into the device behavior and limitations during SC events and can be used by gate driver designers to develop protection circuits.

AB - While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (VDC), gate resistance (Rg) and gate-source supply voltage (VGS) are varied systematically to investigate the effect of these parameters on the peak current and short-circuit energy. The peak current of the investigated module can be as high as 2.5 kA for VGS=20 V and does not depend significantly on the gate resistors used in this research. A safe operating area (SOA) is mapped at different VGS and pulse durations and for VDS=800 V, which is typically encountered in applications for devices of these ratings. Five modules were failed in total, with a critical short-circuit energy, Ecr ranging from 7.3 J to 9.7 J. The failure mechanism is generally the thermal runaway. Prior to failure, a decrease in VGS can be observed which is an indication of an increased gate-source leakage current. The results obtained in this experimental work show a good withstand capability of the modules to SC events. The experimental data obtained during this work gives an insight into the device behavior and limitations during SC events and can be used by gate driver designers to develop protection circuits.

KW - Power Modules

KW - SiC MOSFET

KW - Short-circuit

KW - Safe Operating Area

KW - Wide Bandgap

U2 - 10.1109/ECCE.2017.8096399

DO - 10.1109/ECCE.2017.8096399

M3 - Article in proceeding

BT - Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - IEEE Press

ER -

Ionita C, Nawaz M, Ilves K, Iannuzzo F. Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module. I Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press. 2017 https://doi.org/10.1109/ECCE.2017.8096399