Simplified Thermal Modeling for IGBT Modules with Periodic Power Loss Profiles in Modular Multilevel Converters

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Resumé

One of the future challenges in Modular Multilevel Converters (MMCs) is how to size key components with compromised costs and design margins while fulfilling
specific reliability targets. It demands better thermal modeling compared to the state-of-the-art in terms of both accuracy and simplicity. Different from two-level power converters, MMCs have inherent dc-bias in arm currents and the power device conduction time is affected by operational parameters. A time-wise thermal modeling for the power devices in MMCs is, therefore, an iteration process and time-consuming. This paper thus proposes a simply analytical thermal modeling method, which adopts equivalent periodic power loss profiles. More importantly, time-domain simulations are not required in the proposed
method. Benchmarking of the proposed methods with the prior-art solutions is performed in terms of parameter sensitivity and model accuracy with a case study on a 30-MW MMC system. Experiments are carried out on a specifically designed scaled-down system to verify the electro-thermal aspects.
OriginalsprogEngelsk
Artikelnummer8331948
TidsskriftIEEE Transactions on Industrial Electronics
Vol/bind66
Udgave nummer3
Sider (fra-til)2323-2332
Antal sider10
ISSN0278-0046
DOI
StatusUdgivet - mar. 2019

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Insulated gate bipolar transistors (IGBT)
Power converters
Benchmarking
Hot Temperature
Costs
Experiments

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    title = "Simplified Thermal Modeling for IGBT Modules with Periodic Power Loss Profiles in Modular Multilevel Converters",
    abstract = "One of the future challenges in Modular Multilevel Converters (MMCs) is how to size key components with compromised costs and design margins while fulfillingspecific reliability targets. It demands better thermal modeling compared to the state-of-the-art in terms of both accuracy and simplicity. Different from two-level power converters, MMCs have inherent dc-bias in arm currents and the power device conduction time is affected by operational parameters. A time-wise thermal modeling for the power devices in MMCs is, therefore, an iteration process and time-consuming. This paper thus proposes a simply analytical thermal modeling method, which adopts equivalent periodic power loss profiles. More importantly, time-domain simulations are not required in the proposedmethod. Benchmarking of the proposed methods with the prior-art solutions is performed in terms of parameter sensitivity and model accuracy with a case study on a 30-MW MMC system. Experiments are carried out on a specifically designed scaled-down system to verify the electro-thermal aspects.",
    keywords = "Insulated gate bipolar transistor (IGBT), modular multilevel converter (MMC), power semiconductor, Reliability, thermal stress estimation, thermal design",
    author = "Yi Zhang and Huai Wang and Zhongxu Wang and Yongheng Yang and Frede Blaabjerg",
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    AU - Zhang, Yi

    AU - Wang, Huai

    AU - Wang, Zhongxu

    AU - Yang, Yongheng

    AU - Blaabjerg, Frede

    PY - 2019/3

    Y1 - 2019/3

    N2 - One of the future challenges in Modular Multilevel Converters (MMCs) is how to size key components with compromised costs and design margins while fulfillingspecific reliability targets. It demands better thermal modeling compared to the state-of-the-art in terms of both accuracy and simplicity. Different from two-level power converters, MMCs have inherent dc-bias in arm currents and the power device conduction time is affected by operational parameters. A time-wise thermal modeling for the power devices in MMCs is, therefore, an iteration process and time-consuming. This paper thus proposes a simply analytical thermal modeling method, which adopts equivalent periodic power loss profiles. More importantly, time-domain simulations are not required in the proposedmethod. Benchmarking of the proposed methods with the prior-art solutions is performed in terms of parameter sensitivity and model accuracy with a case study on a 30-MW MMC system. Experiments are carried out on a specifically designed scaled-down system to verify the electro-thermal aspects.

    AB - One of the future challenges in Modular Multilevel Converters (MMCs) is how to size key components with compromised costs and design margins while fulfillingspecific reliability targets. It demands better thermal modeling compared to the state-of-the-art in terms of both accuracy and simplicity. Different from two-level power converters, MMCs have inherent dc-bias in arm currents and the power device conduction time is affected by operational parameters. A time-wise thermal modeling for the power devices in MMCs is, therefore, an iteration process and time-consuming. This paper thus proposes a simply analytical thermal modeling method, which adopts equivalent periodic power loss profiles. More importantly, time-domain simulations are not required in the proposedmethod. Benchmarking of the proposed methods with the prior-art solutions is performed in terms of parameter sensitivity and model accuracy with a case study on a 30-MW MMC system. Experiments are carried out on a specifically designed scaled-down system to verify the electro-thermal aspects.

    KW - Insulated gate bipolar transistor (IGBT)

    KW - modular multilevel converter (MMC)

    KW - power semiconductor

    KW - Reliability

    KW - thermal stress estimation

    KW - thermal design

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