Subnanosecond switching in bistable Fabry-Perot semiconductor laser amplifiers

D. S. Olesen*, K. E. Stubkjaer, B. Mikkelsen, W. Zheng, T. Duurhus, P. B. Hansen, H. E. Lassen, H. Olesen

*Kontaktforfatter

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1 Citationer (Scopus)

Abstract

Switching times of approximately 1 ns measured for a 1.3-μm Fabry-Perot (FP) laser amplifier are reported. For antireflection coated amplifiers, switching times of 230-250 ps, suggesting transmission rates of up to approximately 2 Gb/s, are predicted. Injection of light to the FP amplifier with a wavelength close to that of a cavity resonance depletes the carriers. The cavity resonance then shifts the wavelength of the input signal due to the carrier density dependence of the refractive index. The positive feedback mechanism further increases the amplification of the signal and gives rise to fast switching. The switching time is mainly determined by the carrier lifetime. Reducing the facet reflectivities allows the amplifier to be driven at higher carrier densities, which results in decreasing carrier lifetimes and consequently decreasing switching times.

OriginalsprogEngelsk
TitelTechnical Digest Series
Antal sider1
ForlagPubl by Optical Soc of America
Publikationsdato1990
Sider117
ISBN (Trykt)1557521123
StatusUdgivet - 1990
Udgivet eksterntJa
Begivenhed1990 Optical Fiber Communications Conference - OFC'90 - San Francisco, CA, USA
Varighed: 22 jan. 199026 jan. 1990

Konference

Konference1990 Optical Fiber Communications Conference - OFC'90
BySan Francisco, CA, USA
Periode22/01/199026/01/1990
SponsorIEEE Lasers and Electro-Optics Soc, Optical Soc of America
NavnTechnical Digest Series

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