Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules

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Abstract

This paper demonstrates the parallel connection of two 10 kV SiC MOSFET modules with a focus on eliminating inter-module oscillations during the turn-on switching event. A dual-gate driver structure is proposed to drive paralleled 10 kV SiC MOSFETs. Based on the platform, the mechanism of inter-module oscillation is observed and analyzed, revealing the cause as the circulating current flowing in the loop with the lowest impedance between paralleled modules. To dampen inter-module oscillations, ferrite beads are added to the gate loop. The effectiveness of the ferrite beads in the paralleling of medium voltage modules case is analyzed and experimentally verified by a double pulse test (DPT) with two paralleled 10 kV SiC MOSFET power modules at 6000 V/ 50 A.
OriginalsprogEngelsk
Titel2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
Antal sider7
ForlagIEEE (Institute of Electrical and Electronics Engineers)
Publikationsdato17 maj 2024
Sider2485-2491
ISBN (Trykt)979-8-3503-5134-7
ISBN (Elektronisk)979-8-3503-5133-0
DOI
StatusUdgivet - 17 maj 2024
Begivenhed 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) - Chengdu, Kina
Varighed: 17 maj 202420 maj 2024
https://ieeexplore.ieee.org/xpl/conhome/10567049/proceeding

Konference

Konference 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
Land/OmrådeKina
ByChengdu
Periode17/05/202420/05/2024
Internetadresse
NavnInternational Power Electronics and Motion Control Conference (PEMC)
ISSN2473-0165

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