Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application

Mengxing Chen; Donghua Pan; Huai Wang; Xiongfei Wang; Frede Blaabjerg; Wei Wang

Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application

Mengxing Chen, Donghua Pan, Huai Wang, Xiongfei Wang, Frede Blaabjerg, Wei Wang

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

7 Citationer (Scopus)

Abstract

The switching characterization of power devices is critical for improving the efficiency and reliability of power electronic converters. In this paper, the switching characteristics of silicon carbide (SiC) MOSFETs in a three-level active neutral-point-clamped (3L-ANPC) inverter are investigated. A parasitic model of the 3L-ANPC phase-leg is proposed first based on a design case and its ANSYS/Q3D simulation. Then, two typical commutation modes for ANPC inverters, namely the outer mode and the inner mode, are studied, and the separate switching loops and parasitic inductances are identified according to the parasitic model. Knowing this, double-pulse tests (DPTs) for each type of commutation are conducted. The differences in terms of switching characteristics and switching dissipations are fully revealed. The conclusion drawn can be utilized for developing the next-generation highly efficient and reliable SiC MOSFET based 3L-ANPC inverters.

Originalsprog	Engelsk
Titel	Proceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)
Antal sider	7
Udgivelsessted	Busan, Korea (South)
Forlag	IEEE Press
Publikationsdato	maj 2019
Artikelnummer	8796955
ISBN (Trykt)	978-1-7281-1612-9
ISBN (Elektronisk)	978-89-5708-313-0
Status	Udgivet - maj 2019
Begivenhed	2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) - Busan, Sydkorea Varighed: 27 maj 2019 → 30 maj 2019

Konference

Konference	2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)
Land/Område	Sydkorea
By	Busan
Periode	27/05/2019 → 30/05/2019

Navn	International Conference on Power Electronics
ISSN	2150-6078

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2 Afsluttet

Highly Efficient and Reliable SiC based Power Electronic Systems (HER-SiC)
Blaabjerg, F., Wang, H., Wang, X., Chen, M. & Qin, Z.
01/12/2016 → 31/12/2020
Projekter: Projekt › Forskning
Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning

7 Citationer
1 Ph.d.-afhandling

SiC-Based 1.5-kV Photovoltaic Inverter: Switching Behavior, Thermal Modeling, and Reliability Assessment
Chen, M., 2020, Aalborg Universitetsforlag. 87 s.
Publikation: Ph.d.-afhandling

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Citationsformater

@inproceedings{1dd624719dc640cf805722ac24908872,

title = "Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application",

abstract = "The switching characterization of power devices is critical for improving the efficiency and reliability of power electronic converters. In this paper, the switching characteristics of silicon carbide (SiC) MOSFETs in a three-level active neutral-point-clamped (3L-ANPC) inverter are investigated. A parasitic model of the 3L-ANPC phase-leg is proposed first based on a design case and its ANSYS/Q3D simulation. Then, two typical commutation modes for ANPC inverters, namely the outer mode and the inner mode, are studied, and the separate switching loops and parasitic inductances are identified according to the parasitic model. Knowing this, double-pulse tests (DPTs) for each type of commutation are conducted. The differences in terms of switching characteristics and switching dissipations are fully revealed. The conclusion drawn can be utilized for developing the next-generation highly efficient and reliable SiC MOSFET based 3L-ANPC inverters.",

keywords = "ANPC inverter, Parasitic inductance, SiC MOSFET, Switching characterization",

author = "Mengxing Chen and Donghua Pan and Huai Wang and Xiongfei Wang and Frede Blaabjerg and Wei Wang",

year = "2019",

month = may,

language = "English",

isbn = "978-1-7281-1612-9",

series = "International Conference on Power Electronics",

publisher = "IEEE Press",

booktitle = "Proceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)",

note = "2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) ; Conference date: 27-05-2019 Through 30-05-2019",

}

Chen, M, Pan, D, Wang, H , Wang, X , Blaabjerg, F & Wang, W 2019, Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application. i Proceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)., 8796955, IEEE Press, Busan, Korea (South), International Conference on Power Electronics, 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia), Busan, Sydkorea, 27/05/2019. <https://ieeexplore.ieee.org/document/8796955>

Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application. / Chen, Mengxing; Pan, Donghua; Wang, Huai et al.
Proceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia). Busan, Korea (South): IEEE Press, 2019. 8796955 (International Conference on Power Electronics).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application

AU - Chen, Mengxing

AU - Pan, Donghua

AU - Wang, Huai

AU - Wang, Xiongfei

AU - Blaabjerg, Frede

AU - Wang, Wei

PY - 2019/5

Y1 - 2019/5

N2 - The switching characterization of power devices is critical for improving the efficiency and reliability of power electronic converters. In this paper, the switching characteristics of silicon carbide (SiC) MOSFETs in a three-level active neutral-point-clamped (3L-ANPC) inverter are investigated. A parasitic model of the 3L-ANPC phase-leg is proposed first based on a design case and its ANSYS/Q3D simulation. Then, two typical commutation modes for ANPC inverters, namely the outer mode and the inner mode, are studied, and the separate switching loops and parasitic inductances are identified according to the parasitic model. Knowing this, double-pulse tests (DPTs) for each type of commutation are conducted. The differences in terms of switching characteristics and switching dissipations are fully revealed. The conclusion drawn can be utilized for developing the next-generation highly efficient and reliable SiC MOSFET based 3L-ANPC inverters.

AB - The switching characterization of power devices is critical for improving the efficiency and reliability of power electronic converters. In this paper, the switching characteristics of silicon carbide (SiC) MOSFETs in a three-level active neutral-point-clamped (3L-ANPC) inverter are investigated. A parasitic model of the 3L-ANPC phase-leg is proposed first based on a design case and its ANSYS/Q3D simulation. Then, two typical commutation modes for ANPC inverters, namely the outer mode and the inner mode, are studied, and the separate switching loops and parasitic inductances are identified according to the parasitic model. Knowing this, double-pulse tests (DPTs) for each type of commutation are conducted. The differences in terms of switching characteristics and switching dissipations are fully revealed. The conclusion drawn can be utilized for developing the next-generation highly efficient and reliable SiC MOSFET based 3L-ANPC inverters.

KW - ANPC inverter

KW - Parasitic inductance

KW - SiC MOSFET

KW - Switching characterization

UR - http://www.scopus.com/inward/record.url?scp=85071650558&partnerID=8YFLogxK

M3 - Article in proceeding

SN - 978-1-7281-1612-9

T3 - International Conference on Power Electronics

BT - Proceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)

PB - IEEE Press

CY - Busan, Korea (South)

T2 - 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)

Y2 - 27 May 2019 through 30 May 2019

ER -

Chen M, Pan D, Wang H , Wang X , Blaabjerg F, Wang W. Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application. I Proceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia). Busan, Korea (South): IEEE Press. 2019. 8796955. (International Conference on Power Electronics).

Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application

Abstract

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Projekter

Highly Efficient and Reliable SiC based Power Electronic Systems (HER-SiC)

Center Of Reliable Power Electronics (CORPE)

Publikation

SiC-Based 1.5-kV Photovoltaic Inverter: Switching Behavior, Thermal Modeling, and Reliability Assessment

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