Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

Abstrakt

The switching characterization of power devices is critical for improving the efficiency and reliability of power electronic converters. In this paper, the switching characteristics of silicon carbide (SiC) MOSFETs in a three-level active neutral-point-clamped (3L-ANPC) inverter are investigated. A parasitic model of the 3L-ANPC phase-leg is proposed first based on a design case and its ANSYS/Q3D simulation. Then, two typical commutation modes for ANPC inverters, namely the outer mode and the inner mode, are studied, and the separate switching loops and parasitic inductances are identified according to the parasitic model. Knowing this, double-pulse tests (DPTs) for each type of commutation are conducted. The differences in terms of switching characteristics and switching dissipations are fully revealed. The conclusion drawn can be utilized for developing the next-generation highly efficient and reliable SiC MOSFET based 3L-ANPC inverters.
OriginalsprogEngelsk
TitelProceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)
Antal sider7
Udgivelses stedBusan, Korea (South)
ForlagIEEE Press
Publikationsdatomaj 2019
Artikelnummer8796955
ISBN (Trykt)978-1-7281-1612-9
ISBN (Elektronisk)978-89-5708-313-0
StatusUdgivet - maj 2019
Begivenhed2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) - Busan, Sydkorea
Varighed: 27 maj 201930 maj 2019

Konference

Konference2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)
LandSydkorea
ByBusan
Periode27/05/201930/05/2019
NavnInternational Conference on Power Electronics
ISSN2150-6078

    Fingerprint

Citationsformater

Chen, M., Pan, D., Wang, H., Wang, X., Blaabjerg, F., & Wang, W. (2019). Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application. I Proceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) [8796955] IEEE Press. International Conference on Power Electronics