Switching speed limitations of high power IGBT modules

Bogdan Ioan Incau; Ionut Trintis; Stig Munk-Nielsen

doi:10.1109/EPE.2015.7309369

Switching speed limitations of high power IGBT modules

Bogdan Ioan Incau, Ionut Trintis, Stig Munk-Nielsen

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Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

5 Citationer (Scopus)

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Abstract

In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions.

Originalsprog	Engelsk
Titel	Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15-ECCE Europe)
Antal sider	8
Forlag	IEEE Press
Publikationsdato	sep. 2015
Sider	1-8
DOI	https://doi.org/10.1109/EPE.2015.7309369
Status	Udgivet - sep. 2015
Begivenhed	17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20, Geneva, Schweiz Varighed: 8 sep. 2015 → 10 sep. 2015

Konference

Konference	17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
Lokation	Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20
Land/Område	Schweiz
By	Geneva
Periode	08/09/2015 → 10/09/2015

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10.1109/EPE.2015.7309369

Switching speed limitations of high power IGBT modulesIndsendt manuskript, 2,27 MB

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Citationsformater

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title = "Switching speed limitations of high power IGBT modules",

abstract = "In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions.",

keywords = "High power discrete device, IGBT, Power semiconductor device, Reverse recovery, Switching losses",

author = "Incau, {Bogdan Ioan} and Ionut Trintis and Stig Munk-Nielsen",

year = "2015",

month = sep,

doi = "10.1109/EPE.2015.7309369",

language = "English",

pages = "1--8",

booktitle = "Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15-ECCE Europe)",

publisher = "IEEE Press",

note = "17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, IEEE ECCE-EPE 2015 ; Conference date: 08-09-2015 Through 10-09-2015",

}

Incau, BI, Trintis, I & Munk-Nielsen, S 2015, Switching speed limitations of high power IGBT modules. i Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15-ECCE Europe). IEEE Press, s. 1-8, 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, Geneva, Schweiz, 08/09/2015. https://doi.org/10.1109/EPE.2015.7309369

Switching speed limitations of high power IGBT modules. / Incau, Bogdan Ioan; Trintis, Ionut; Munk-Nielsen, Stig.
Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15-ECCE Europe). IEEE Press, 2015. s. 1-8.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Switching speed limitations of high power IGBT modules

AU - Incau, Bogdan Ioan

AU - Trintis, Ionut

AU - Munk-Nielsen, Stig

PY - 2015/9

Y1 - 2015/9

N2 - In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions.

AB - In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions.

KW - High power discrete device

KW - IGBT

KW - Power semiconductor device

KW - Reverse recovery

KW - Switching losses

U2 - 10.1109/EPE.2015.7309369

DO - 10.1109/EPE.2015.7309369

M3 - Article in proceeding

SP - 1

EP - 8

BT - Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15-ECCE Europe)

PB - IEEE Press

T2 - 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015

Y2 - 8 September 2015 through 10 September 2015

ER -

Switching speed limitations of high power IGBT modules

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