Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

50 Downloads (Pure)

Abstract

Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with larger die edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing.
OriginalsprogEngelsk
Titel2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Antal sider8
ForlagIEEE
Publikationsdato2 okt. 2023
Artikelnummer10264610
ISBN (Elektronisk)9789075815412
DOI
StatusUdgivet - 2 okt. 2023
Begivenhed2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Danmark
Varighed: 4 sep. 20238 sep. 2023

Konference

Konference2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Land/OmrådeDanmark
ByAalborg
Periode04/09/202308/09/2023

Fingeraftryk

Dyk ned i forskningsemnerne om 'Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area'. Sammen danner de et unikt fingeraftryk.

Citationsformater