The Temperature Dependence of the Flatband Voltage in High Power IGBTs

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Resumé

This letter experimentally demonstrates the temperature dependence of the Flatband Voltage (VFB) in high power Insulated-Gate-Bipolar-Transistors (IGBTs). The gate voltage during the turn-on delay is shown to fluctuate up to 5mV/°C as a result of this temperature dependence. We investigate the practical use of this temperature dependence as an addition to the genre of IGBT junction temperature measurement methods known as Temperature Sensitive Electrical Parameters (TSEPs). The letter will outline some possible measurement circuits and highlights issues with the VFB that may make its use as a TSEP problematic.
OriginalsprogEngelsk
TidsskriftIEEE Transactions on Industrial Electronics
Vol/bind66
Udgave nummer7
Sider (fra-til)5581 - 5584
Antal sider4
ISSN0278-0046
DOI
StatusUdgivet - jul. 2019

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Insulated gate bipolar transistors (IGBT)
Electric potential
Temperature
Temperature measurement
Power bipolar transistors
Networks (circuits)

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The Temperature Dependence of the Flatband Voltage in High Power IGBTs. / Baker, Nicholas Raymond; Iannuzzo, Francesco.

I: IEEE Transactions on Industrial Electronics, Bind 66, Nr. 7, 07.2019, s. 5581 - 5584.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

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