Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module

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Resumé

Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 % in thermal impedance if the PCB board is not included in the simulation model.
OriginalsprogEngelsk
TitelProceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
Antal sider7
Udgivelses stedGenova, Italy
ForlagIEEE Press
Publikationsdatosep. 2019
DOI
StatusUdgivet - sep. 2019
Begivenhed2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italien
Varighed: 3 sep. 20195 sep. 2019

Konference

Konference2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
LandItalien
ByGenova
Periode03/09/201905/09/2019

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Printed circuit boards
Copper
Thermoanalysis
Energy gap
Semiconductor materials
Finite element method
Hot Temperature

Citer dette

Jørgensen, A. B., Cheng, T-H., Hopkins, D., Beczkowski, S. M., Uhrenfeldt, C., & Munk-Nielsen, S. (2019). Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module. I Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) Genova, Italy: IEEE Press. https://doi.org/10.23919/EPE.2019.8915012
Jørgensen, Asger Bjørn ; Cheng, Tzu-Hsuan ; Hopkins, Douglas ; Beczkowski, Szymon Michal ; Uhrenfeldt, Christian ; Munk-Nielsen, Stig. / Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module. Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe). Genova, Italy : IEEE Press, 2019.
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title = "Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module",
abstract = "Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 {\%} in thermal impedance if the PCB board is not included in the simulation model.",
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Jørgensen, AB, Cheng, T-H, Hopkins, D, Beczkowski, SM, Uhrenfeldt, C & Munk-Nielsen, S 2019, Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module. i Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe). IEEE Press, Genova, Italy, Genova, Italien, 03/09/2019. https://doi.org/10.23919/EPE.2019.8915012

Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module. / Jørgensen, Asger Bjørn; Cheng, Tzu-Hsuan; Hopkins, Douglas; Beczkowski, Szymon Michal; Uhrenfeldt, Christian; Munk-Nielsen, Stig.

Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe). Genova, Italy : IEEE Press, 2019.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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T1 - Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module

AU - Jørgensen, Asger Bjørn

AU - Cheng, Tzu-Hsuan

AU - Hopkins, Douglas

AU - Beczkowski, Szymon Michal

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

PY - 2019/9

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N2 - Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 % in thermal impedance if the PCB board is not included in the simulation model.

AB - Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 % in thermal impedance if the PCB board is not included in the simulation model.

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KW - Thermal design

KW - Simulations

KW - Power Module

KW - GaN eHEMTs

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Jørgensen AB, Cheng T-H, Hopkins D, Beczkowski SM, Uhrenfeldt C, Munk-Nielsen S. Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module. I Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe). Genova, Italy: IEEE Press. 2019 https://doi.org/10.23919/EPE.2019.8915012