Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module

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Abstrakt

Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 % in thermal impedance if the PCB board is not included in the simulation model.
OriginalsprogEngelsk
TitelProceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
Antal sider7
Udgivelses stedGenova, Italy
ForlagIEEE Press
Publikationsdatosep. 2019
Artikelnummer8915012
ISBN (Elektronisk)978-9-0758-1531-3
DOI
StatusUdgivet - sep. 2019
Begivenhed2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italien
Varighed: 3 sep. 20195 sep. 2019

Konference

Konference2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
LandItalien
ByGenova
Periode03/09/201905/09/2019

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  • Citationsformater

    Jørgensen, A. B., Cheng, T-H., Hopkins, D., Beczkowski, S. M., Uhrenfeldt, C., & Munk-Nielsen, S. (2019). Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module. I Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) [8915012] IEEE Press. https://doi.org/10.23919/EPE.2019.8915012