Thermal cycling characterization of integrated GaN power module

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Abstract

A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation.
OriginalsprogEngelsk
Titel2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Antal sider7
ForlagIEEE
Publikationsdato4 sep. 2023
Artikelnummer10264265
ISBN (Trykt)979-8-3503-1678-0
ISBN (Elektronisk)978-9-0758-1541-2
DOI
StatusUdgivet - 4 sep. 2023
Begivenhed2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Danmark
Varighed: 4 sep. 20238 sep. 2023

Konference

Konference2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Land/OmrådeDanmark
ByAalborg
Periode04/09/202308/09/2023

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