@inproceedings{12c4a1412f114b05b9853fd6fceaf5ab,
title = "X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design",
abstract = "X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned only up to the 2nd-order harmonic. However, it proves that the model can still accurately approximate the behavior of the transistor under impedance tuning up to the 3rd-order harmonic. The simulation results preliminarily validate the concept of utilizing the X-parameter based modeling technique to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept.",
author = "Yelin Wang and Nielsen, {Troels Studsgaard} and Jensen, {Ole Kiel} and Torben Larsen",
year = "2014",
doi = "10.1109/NEMO.2014.6995691",
language = "English",
series = "International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications proceedings",
booktitle = "Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2014 International Conference on",
publisher = "IEEE",
address = "United States",
note = ": IEEE International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave and Terahertz Applications ; Conference date: 14-05-2014 Through 16-05-2014",
}