X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design

Yelin Wang, Troels Studsgaard Nielsen, Ole Kiel Jensen, Torben Larsen

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3 Citationer (Scopus)

Abstrakt

X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned only up to the 2nd-order harmonic. However, it proves that the model can still accurately approximate the behavior of the transistor under impedance tuning up to the 3rd-order harmonic. The simulation results preliminarily validate the concept of utilizing the X-parameter based modeling technique to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept.
OriginalsprogEngelsk
TitelNumerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2014 International Conference on
Antal sider4
ForlagIEEE
Publikationsdato2014
DOI
StatusUdgivet - 2014
Begivenhed: IEEE International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave and Terahertz Applications - Pavia, Italien
Varighed: 14 maj 201416 maj 2014

Konference

Konference: IEEE International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave and Terahertz Applications
LandItalien
ByPavia
Periode14/05/201416/05/2014
NavnInternational Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications proceedings

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