• Pontoppidanstræde 101, P24

    9220 Aalborg Ø

    Denmark

  • Kroghstræde 6, 56

    9220 Aalborg Ø

    Denmark

20132019
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  • 42 Similar Profiles
Temperature measurement Engineering & Materials Science
Insulated gate bipolar transistors (IGBT) Engineering & Materials Science
Temperature Engineering & Materials Science
Condition monitoring Engineering & Materials Science
Semiconductor materials Engineering & Materials Science
Silicon carbide Engineering & Materials Science
Electric potential Engineering & Materials Science
temperature measurement Physics & Astronomy

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Projects 2018 2019

Research Output 2013 2019

1 Citation (Scopus)
34 Downloads (Pure)

The Temperature Dependence of the Flatband Voltage in High Power IGBTs

Baker, N. R. & Iannuzzo, F., 2019, In : IEEE Transactions on Industrial Electronics. 4 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
Electric potential
Temperature
Temperature measurement
Power bipolar transistors

Impact of Kelvin-Source Resistors on Current Sharing and Failure Detection in Multichip Power Modules

Baker, N., Iannuzzo, F. & Li, H., Sep 2018, Proceedings of the 2018 20th European Conference on Power Electronics and Applications, EPE'18 ECCE Europe. IEEE Press, p. 1-7 7 p. 8515541

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Resistors
Sensors
Electric current control
Silicon carbide
Semiconductor materials

Junction temperature measurement in a power semiconductor module

Baker, N. R., 17 May 2018, IPC No. G01K 7/16 (2006.01), Patent No. WO/2018/086666, Priority date 8 Nov 2016

Research output: PatentResearch

Open Access
Temperature measurement
Semiconductor materials
Temperature
Electric current control
Calibration
3 Downloads (Pure)

Smart SiC MOSFET accelerated lifetime testing

Baker, N. & Iannuzzo, F., Sep 2018, In : Microelectronics Reliability. 88-90, p. 43-47 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

field effect transistors
Semiconductor materials
life (durability)
Monitoring
Testing
5 Citations (Scopus)

Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

Luo, H., Baker, N., Iannuzzo, F. & Blaabjerg, F., Sep 2017, In : Microelectronics Reliability. 76-77, p. 415-419 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

field effect transistors
modules
Aging of materials
degradation
Degradation