19992023
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Fingerprint Fingerprint is based on mining the text of the person's scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

  • 27 Similar Profiles
Insulated gate bipolar transistors (IGBT) Engineering & Materials Science
Short circuit currents Engineering & Materials Science
Electric potential Engineering & Materials Science
field effect transistors Physics & Astronomy
Temperature Engineering & Materials Science
Networks (circuits) Engineering & Materials Science
heavy ions Physics & Astronomy
Heavy ions Engineering & Materials Science

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Projects 2017 2023

Research Output 1999 2019

20 Downloads (Pure)

A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

Duan, Y., Xiao, F., Luo, Y. & Iannuzzo, F., Mar 2019, In : IEEE Journal of Emerging and Selected Topics in Power Electronics. 7, 1, p. 62-70 9 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
SPICE
Temperature
Physics
Experiments

Mission-Profile-Based Lifetime Prediction for a SiC MOSFET Power Module using a Multi-Step Condition-Mapping Simulation Strategy

Ceccarelli, L., Kotecha, R., Bahman, A. S., Iannuzzo, F. & Mantooth, A., 15 Jan 2019, (Accepted/In press) In : I E E E Transactions on Power Electronics.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Topology
Power converters
Reliability analysis
Specifications
Finite element method
3 Downloads (Pure)

Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

Valente, M., Iannuzzo, F., Yang, Y. & Gurpinar, E., 5 Feb 2019, 2018 IEEE 4th Southern Power Electronics Conference (SPEC). IEEE

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Gallium nitride
High electron mobility transistors
Power electronics
Topology
Silicon
13 Downloads (Pure)

The Temperature Dependence of the Flatband Voltage in High Power IGBTs

Baker, N. R. & Iannuzzo, F., 2019, In : IEEE Transactions on Industrial Electronics. 4 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
Electric potential
Temperature
Temperature measurement
Power bipolar transistors

A Multi-Layer RC Thermal Model for Power Modules Adaptable to Different Operating Conditions and Aging

Akbari, M., Bahman, A. S., Tavakoli Bina, M., Eskandari, B., Iannuzzo, F. & Blaabjerg, F., 30 Oct 2018, Proceedings of 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe). IEEE, p. 1-10 10 p. 8515416

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Aging of materials
Thermal aging
Hot Temperature
Circuit simulation
Insulated gate bipolar transistors (IGBT)

Press / Media

International konference sætter fokus på bæredygtig energi

Francesco Iannuzzo

03/10/2018

2 items of media coverage

Press/Media: Press / Media

Danmark på pålidelighedslandkortet i 2018

Frede Blaabjerg & Francesco Iannuzzo

04/05/2018

1 item of media coverage

Press/Media: Press / Media