Photo of He Du
  • Pontoppidanstræde 105, 3119

    9220 Aalborg Ø

    Denmark

20182018
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Research Output 2018 2018

  • 1 Conference article in Journal
14 Downloads (Pure)

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 661-665 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

short circuits
Short circuit currents
field effect transistors
static characteristics
degradation