Photo of He Du
  • Pontoppidanstræde 101, 2-053

    9220 Aalborg Ø

    Denmark

20182020
If you made any changes in Pure these will be visible here soon.

Fingerprint The fingerprint consists of automatically generated concepts related to the associated persons. It is updated automatically, when new content is added.

  • 8 Similar Profiles
Short circuit currents Engineering & Materials Science
short circuits Physics & Astronomy
field effect transistors Physics & Astronomy
Degradation Engineering & Materials Science
Insulated gate bipolar transistors (IGBT) Engineering & Materials Science
degradation Physics & Astronomy
Silicon carbide Engineering & Materials Science
Wire Engineering & Materials Science

Network Dive into details by clicking on the dots.

Research Output 2018 2020

  • 2 Article in proceeding
  • 2 Conference article in Journal
  • 1 Journal article
8 Downloads (Pure)

Impact of Repetitive Short-Circuit Tests on the Normal Operation of SiC MOSFETs Considering Case Temperature Influence

Du, H., Reigosa, P. D., Ceccarelli, L. & Iannuzzo, F., 2020, In : IEEE Journal of Emerging and Selected Topics in Power Electronics. 11 p.

Research output: Contribution to journalJournal articleResearchpeer-review

File
Silicon carbide
Short circuit currents
Temperature
Degradation
Leakage currents

Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

Jiang, M., Fu, G., Ceccarelli, L., Du, H., Fogsgaard, M. B., Bahman, A. S., Yang, Y. & Iannuzzo, F., Sep 2019, Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE) . IEEE Press, p. 839-844 6 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Wire
Crack propagation
Materials properties
Health
13 Downloads (Pure)

Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests

Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., Mar 2019, Proceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019). IEEE Press, p. 332-337 6 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Short circuit currents
Temperature
Bias voltage
Leakage currents
Wire
12 Downloads (Pure)

Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules

Du, H., Ceccarelli, L., Iannuzzo, F. & Reigosa, P. D., Sep 2019, In : Microelectronics Reliability. 100-101, p. 1-6 6 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

Open Access
File
short circuits
Short circuit currents
field effect transistors
cycles
degradation
3 Citations (Scopus)
20 Downloads (Pure)

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 661-665 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

short circuits
Short circuit currents
field effect transistors
static characteristics
degradation