Photo of He Du
  • Pontoppidanstræde 101, 2-053

    9220 Aalborg Ø

    Denmark

20182020

Research output per year

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Research Output

  • 3 Journal article
  • 2 Article in proceeding
  • 1 Conference article in Journal
2020

Impact of Repetitive Short-Circuit Tests on the Normal Operation of SiC MOSFETs Considering Case Temperature Influence

Du, H., Reigosa, P. D., Ceccarelli, L. & Iannuzzo, F., Mar 2020, In : IEEE Journal of Emerging and Selected Topics in Power Electronics. 8, 1, p. 195-205 11 p., 8844745.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
3 Citations (Scopus)
37 Downloads (Pure)
2019

Cost-Effective Prognostics of IGBT Bond Wires With Consideration of Temperature Swing

Hu, K., Liu, Z., Du, H., Ceccarelli, L., Iannuzzo, F., Blaabjerg, F. & Tasiu, I. A., 16 Dec 2019, In : I E E E Transactions on Power Electronics. 35, 7, p. 6773-6784 12 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
1 Citation (Scopus)
3 Downloads (Pure)

Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

Jiang, M., Fu, G., Ceccarelli, L., Du, H., Fogsgaard, M. B., Bahman, A. S., Yang, Y. & Iannuzzo, F., Sep 2019, Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE) . IEEE Press, p. 839-844 6 p. 8912236. (IEEE Energy Conversion Congress and Exposition).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests

Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., 24 May 2019, 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. IEEE Press, p. 332-337 6 p. 8722300. (I E E E Applied Power Electronics Conference and Exposition. Conference Proceedings).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
24 Downloads (Pure)

Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules

Du, H., Ceccarelli, L., Iannuzzo, F. & Reigosa, P. D., Sep 2019, In : Microelectronics Reliability. 100-101, p. 1-6 6 p., 113373.

Research output: Contribution to journalJournal articleResearchpeer-review

12 Downloads (Pure)
2018

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 661-665 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

Open Access
File
3 Citations (Scopus)
28 Downloads (Pure)