Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Models
98%
Transients
54%
Nitride
50%
Characteristics
46%
Insulated Gate Bipolar Transistor
38%
Fields
37%
Sustained Oscillation
30%
Transistor
28%
Recovery
26%
Pulse Test
21%
Failure (Mechanical)
17%
Oscillatory
16%
Design
16%
Simulation Result
14%
Experiments
14%
Three-Phase Inverter
14%
Printed Circuit Board
14%
Induced Failure
14%
Switching Loss
14%
Injection Level
14%
Mechanisms
14%
Waveform
14%
Power Electronics
14%
Optimum Design
14%
Ac Signal
12%
Test Circuit
11%
Internals
11%
Dc Bus Voltage
10%
Good Agreement
10%
High Temperature Operations
9%
Cavity
9%
Performance Characteristic
8%
Demonstrates
7%
Current Load
7%
Temperature Dependency
6%
Damping Effect
6%
Bridge Circuits
5%
Design Concept
5%
Field Operation
5%
Facilities
5%
Circuit Test
5%
Excess Carrier
5%
Earth and Planetary Sciences
Pitch (Inclination)
65%
Field Effect Transistor
44%
Investigation
19%
High Electron Mobility Transistors
16%
Gallium Nitride
16%
Short Circuit
14%
Retarding
14%
Occurrence
14%
Experimental Study
14%
Positive Feedback
5%
Slope
5%