Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Parasitic Capacitance
48%
Pulse Test
24%
Transients
22%
Switching Loss
22%
Energy Dissipation
21%
Capacitive Coupling
20%
Test Setup
20%
Common Mode
17%
Equivalent Circuit
17%
Behavioral Modeling
16%
Capacitive
13%
Miller Capacitance
13%
Power Electronics
12%
Experimental Result
11%
Link Voltage
10%
Experimental Measurement
10%
Good Agreement
10%
Time Domain
10%
Behavioral Model
10%
Breakdown Voltage
10%
Energy Engineering
9%
Heat Cycle
8%
Thermal Stress Analysis
8%
Dead Time
8%
Temperature Distribution
8%
Magnetic Core
8%
Domain Response
8%
Sustained Oscillation
8%
Prediction Error
8%
Multistage
8%
SPICE
8%
Design Process
8%
Ground Connection
8%
Datasheet
8%
Electrical Field
8%
Predictive Capability
8%
DC-to-DC Converter
8%
Light Load
8%
Power Supply
8%
Schottky Barrier Diode
8%
Switching Speed
7%
Mosfets
6%
Parallel Connection
6%
Semiconductor Device
5%
Simulation Result
5%
Wide Bandgap Semiconductor
5%
Keyphrases
10 kV SiC MOSFET
16%
Behavioral Modeling
16%
Grounding Current
16%
Medium Voltage
16%
SiC MOSFET
12%
Power Module
11%
Medium-voltage Power Module
10%
Inductors
9%
Miller
8%
Capacitance Modeling
8%
Sustained Oscillations
8%
Parallel Windings
8%
Behavior Analysis
8%
Filter Inductor
8%
High-side
8%
Module Analysis
8%
3D Thermal Analysis
8%
Loss Prediction
8%
Copper Pattern
8%
Low Capacitance
8%
Volt-second
8%
Gate Driver Power Supply
8%
Junction Barrier Schottky (JBS) Diode
8%
Double Pulse Test
5%
Heat Cycle Test
5%
Loss Measurement
5%
Capacitive Coupling
5%
