Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Thermal Resistance
66%
Power Cycle
44%
Delamination
44%
Module Design
41%
Semiconductor Device
41%
Bonding Wire
33%
Thermal Stress Analysis
33%
Heat Cycle
33%
Temperature Distribution
33%
Energy Dissipation
33%
Failure Mechanism
33%
Coefficient of Thermal Expansion
33%
Primary Factor
33%
Heterojunctions
33%
Wide Bandgap Semiconductor
33%
Visual Inspection
33%
Failure Analysis
33%
Material Interface
33%
Scanning Acoustic Microscopy
33%
Failure Mode
33%
Structural Reliability
33%
Switching Speed
25%
Power Electronics
25%
Simulation Result
22%
Capacitive
16%
Miller Capacitance
16%
Electrical Domain
16%
Design Method
16%
Mechanical Property
16%
3d Simulation
11%
Test Sample
11%
Stress Point
11%
Layer Structure
11%
Substrate Surface
11%
Parasitic Capacitance
11%
Physical Prototyping
11%
Adjacent Layer
11%
Thermal Stress
11%
Mechanical Stress
11%
Thermal Simulation
11%
Front Surface
11%
Direction Perpendicular
11%
Die Structure
11%
Measured Result
8%
Operating Voltage
8%
Slew Rate
8%
Energy Engineering
8%
Keyphrases
Copper Pattern
33%
GaN Power Device
33%
3D Thermal Analysis
33%
Thermal Cycling
33%
Thermomechanical Reliability
33%
Semiconductor Devices
33%
Heat Cycle Test
22%
Low Parasitic Inductance
16%
Soldering
16%
Failure Mechanism
16%
Thermal Resistance
16%
Electrical Parameters
16%
Thermal Cycling Test
16%
Scanning Acoustic Microscope
16%
Microscope Observation
16%
Wire Temperature
16%
Thermal Parameters
16%
Thermomechanical Characteristics
16%
Die Structure
16%
Adjacent Layers
11%
Thermal Stress Simulation
11%
A12O3
11%
Large Die
11%
Evaluated Temperature
11%
Side Cooling
11%
Conchoidal Fracture
11%
High-frequency Applications
11%
Semiconductor chips
11%
Front Surface
11%
Reliability Capability
8%
Aluminum Wire
8%
Influencing Power
8%
Prediction Gap
8%
Maximum Junction Temperature
8%
Power Cycling Lifetime
8%
Internal Temperature Distribution
8%
Edge Width
8%
Die Shape
8%
3.3 kV SiC MOSFET
8%
Die Thickness
8%
Strain Change
8%
Material Science
Metal-Oxide-Semiconductor Field-Effect Transistor
66%
Capacitance
50%
Semiconductor Device
41%
Thermal Stress
33%
Stress Analysis
33%
Delamination
33%
Thermal Cycling
33%
Mechanical Testing
33%
Mechanical Stress
16%
Laminate
16%
Heterojunction
16%
Transistor
16%
Heat Resistance
16%
Interface Fracture
16%
Interface (Material)
16%
Electron Mobility
16%
Thermal Expansion
16%
Wide Bandgap Semiconductor
16%
Scanning Acoustic Microscopy
16%
Scanning Electron Microscopy
16%
Surface (Surface Science)
11%
Aluminum
8%
