Engineering
Insulated Gate Bipolar Transistor
80%
Transients
66%
Metal-Oxide-Semiconductor Field-Effect Transistor
60%
Failure Mechanism
43%
Aluminum Electrolytic Capacitor
40%
Drain Voltage
40%
Thermal Characterization
40%
Experimental Result
36%
Junction Temperature
26%
Power Converter
26%
Saturation State
26%
Thermal Stress
26%
Applicability
24%
Semiconductor Device
24%
Calibration Curve
23%
Cooling Curve
23%
Strain Sensing
20%
Filtration
20%
Metallizations
20%
Crack Propagation
20%
Zener Diode
20%
Voltage Drop
20%
Absolute Value
20%
Injection Unit
20%
Figure of Merit
20%
Change Rate
20%
Temperature Coefficient
20%
Power Density
20%
Measurement Condition
20%
Related Failure
20%
Test Condition
15%
Railway
13%
Mosfets
11%
Limitations
10%
Condition Monitoring
10%
Dynamic Performance
10%
Gate Voltage
10%
Contact Area
10%
Revealed Failure
10%
Analytical Model
10%
Fracture Mechanics
10%
Temperature Dependence
10%
Testing Condition
10%
Electric Field
10%
Wind Power
6%
Illustrates
6%
Stress Model
6%
Negligible Effect
6%
Series Resistance
6%
Power Supply
6%
Keyphrases
Cycles to Failure
46%
End-of-life Criteria
35%
Gradient-based
25%
Silicon Carbide (SiC) MOSFET
20%
Thermal Transient Measurement
20%
Drain Voltage
20%
Failure Phenomena
20%
Film Capacitor
20%
Thermal Characterization
20%
Power-off
20%
Injection Unit
20%
Zener Diode
20%
Power Semiconductor Module
20%
Insulation Resistance
20%
Accelerated Degradation Test
20%
Degradation Failure
20%
AC Filter
20%
Measurement Condition
20%
Power Cycling Test
20%
Thermal Impedance
20%
Matrix Characterization
20%
IGBT Module
20%
Thermal Impedance Matrix
20%
DC Power Cycling
20%
Temperature Observer
20%
Dynamic Avalanche
20%
Measuring Circuit
13%
Junction Temperature Estimation
13%
Testing Sample
13%
Current-voltage
13%
Thermal Calibration
13%
Saturation Voltage
11%
Thermo-sensitive Electrical Parameter
6%
Silicon Carbide Devices
6%
Heating Current
6%
Condition Monitoring
6%
Structure Information
6%
Thermal Properties
6%
Capacitance Value
6%
AC-AC
6%
Dynamic Performance
6%
Silicon Semiconductor
6%
Failure Mechanism
6%
Insulated Gate Bipolar Transistors
6%
Power Cycling Test
6%
AC Current
6%
Comprehensive Investigation
6%
Testing Mechanism
6%
Failure Mechanism Analysis
6%
Multi-conditions
6%
Material Science
Bipolar Transistor
100%
Capacitor
62%
Metal-Oxide-Semiconductor Field-Effect Transistor
60%
Electronic Circuit
44%
Aluminum
40%
Silicon Carbide
40%
Density
30%
Thermal Stress
26%
Semiconductor Device
24%
Film
20%
Thermal Analysis
20%
Electrical Resistivity
20%
Crack Propagation
13%
Capacitance
11%
Thermal Property
8%
Silicon
8%
Contact Resistance
6%
Fracture Mechanics
6%
Contact Area
6%
