Project Details

Description

The project will develop new Si/GaN materials with highly advanced and well-controlled functionalization with respect to doping, defects, and their spatial profiles. Components fabricated on optimized Si/GaN wafers will be tested in the international consortium behind the project

Key findings

GaN HEMT; reliability
Short titleSEMPEL
StatusFinished
Effective start/end date01/04/201531/12/2019