Semiconductor materials for power electronics (SEMPEL)

Power electronics provides efficient and optimized control of electricity in applications ranging from consumer electronics over electric motors to grid connections of energy supply systems. Development of efficient components and systems for the constantly growing electrical energy sector challenge basic properties of semiconductor materials and design of components, modules, and systems. Silicon (Si), which so far has been the best performing material for power electronics, is being challenged by new wide band gap materials with Gallium Nitride (GaN) as one of the very promising replacements for Si in a number of applications. Mass production of GaN components requires growth of the material as thin films where Si wafers are the most promising substrates. Due to its very favorable electrical and thermal properties, GaN-on-Si is expected to conquer an increasing share of the power electronics as well as opto-electronics markets during the next decade and according to the major industrial players in power electronics we are at the start of the GaN era. However, the multilayer and multi element structure of GaN-on-Si technology introduce new materials challenges and introduction of GaN components introduce completely new criteria in the design of modules and systems.
With the present project we propose to carry out a coordinated research effort in order to establish a solid platform for the development of future GaN-on-Si based components and systems for power electronics.
The project will therefore develop new Si/GaN materials with highly advanced and well-controlled functionalization with respect to doping, defects, and their spatial profiles. Components fabricated on optimized Si/GaN wafers will be tested in the international consortium behind the project.