Find Publications

Search concepts
Selected filters
2014
23 Citations (Scopus)

Instabilities in silicon power devices: A review of failure mechanisms in modern power devices

Iannuzzo, F., Abbate, C. & Busatto, G., 1 Sep 2014, In : IEEE Industrial Electronics Magazine. 8, 3, p. 28-39 12 p., 6899810.

Research output: Contribution to journalJournal articleResearchpeer-review

Power electronics
Silicon
Domestic appliances
Consumer electronics
Electric arc welding
2016
45 Citations (Scopus)

IGBT Junction Temperature Measurement via Peak Gate Current

Baker, N., Munk-Nielsen, S., Iannuzzo, F. & Liserre, M., May 2016, In : IEEE Transactions on Power Electronics. 31, 5, p. 3784-3793 10 p., 7180393.

Research output: Contribution to journalJournal articleResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Temperature measurement
MOS devices
Electric potential
Resistors
2015
71 Citations (Scopus)

Reliability Oriented Design Tool For the New Generation of Grid Connected PV-Inverters

Sintamarean, N. C., Blaabjerg, F., Wang, H., Iannuzzo, F. & De Place Rimmen, P., May 2015, In : IEEE Transactions on Power Electronics. 30, 5, p. 2635-2644 10 p., 6926812.

Research output: Contribution to journalJournal articleResearchpeer-review

Degradation
Aging of materials
Feedback
Temperature
Hot Temperature
11 Citations (Scopus)

Online junction temperature measurement using peak gate current

Baker, N., Munk-Nielsen, S., Iannuzzo, F. & Liserre, M., Mar 2015, Proceedings of the 2015 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, p. 1270-1275 6 p. 7104511. (I E E E Applied Power Electronics Conference and Exposition. Conference Proceedings).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

temperature measurement
frequency measurement
electric potential
resistors
converters
5 Citations (Scopus)

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Abbate, C., Busatto, G., Iannuzzo, F., Mattiazzo, S., Sanseverino, A., Silvestrin, L., Tedesco, D. & Velardi, F., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1496-1500 5 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Heavy Ions
Ion bombardment
high electron mobility transistors
ion irradiation
Heavy ions
2012
17 Citations (Scopus)

Power converters for future LHC experiments

Alderighi, M., Citterio, M., Riva, M., Latorre, S., Costabeber, A., Paccagnella, A., Sichirollo, F., Spiazzi, G., Stellini, M., Tenti, P., Cova, P., Delmonte, N., Lanza, A., Bernardoni, M., Menozzi, R., Baccaro, S., Iannuzzo, F., Sanseverino, A., Busatto, G., De Luca, V. & 1 others, Velardi, F., 1 Mar 2012, In : Journal of Instrumentation. 7, 3, C03012.

Research output: Contribution to journalJournal articleResearchpeer-review

power converters
Calorimeter
Power Converter
Power converters
Calorimeters
2017
1 Citation (Scopus)

Active Thermal Control for Reliability Improvement of MOS-gated Power Devices

Soldati, A., Concari, C., Dossena, F., Barater, D., Iannuzzo, F. & Blaabjerg, F., Oct 2017, Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017. IEEE Press, p. 7935-7940 6 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Electric loads
Model predictive control
Switches
Temperature
Electric potential
10 Citations (Scopus)

Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

Luo, H., Baker, N., Iannuzzo, F. & Blaabjerg, F., Sep 2017, In : Microelectronics Reliability. 76-77, p. 415-419 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

field effect transistors
modules
Aging of materials
degradation
Degradation
2014
17 Citations (Scopus)

Developments on DC/DC converters for the LHC experiment upgrades

Abbate, C., Alderighi, M., Baccaro, S., Busatto, G., Citterio, M., Cova, P., Delmonte, N., Luca, V., Fiore, S., Gerardin, S., Ghisolfi, E., Giuliani, F., Iannuzzo, F., Lanza, A., Latorre, S., Lazzaroni, M., Meneghesso, G., Paccagnella, A., Rampazzo, F., Riva, M. & 5 others, Sanseverino, A., Silvestri, R., Spiazzi, G., Velardi, F. & Zanoni, E., 1 Feb 2014, In : Journal of Instrumentation. 9, 2, C02017.

Research output: Contribution to journalJournal articleResearchpeer-review

Gallium nitride
DC-DC Converter
DC-DC converters
Silicon carbide
converters
2018
2 Citations (Scopus)
10 Downloads (Pure)

Smart SiC MOSFET accelerated lifetime testing

Baker, N. & Iannuzzo, F., Sep 2018, In : Microelectronics Reliability. 88-90, p. 43-47 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

field effect transistors
Semiconductor materials
life (durability)
Monitoring
Testing
2010

Microelectronics Reliability: Editorial

Busatto, G. & Iannuzzo, F., 1 Sep 2010, In : Microelectronics Reliability. 50, 9-11, p. 1191-1192 2 p.

Research output: Contribution to journalEditorialResearchpeer-review

2017
4 Citations (Scopus)

Advanced power cycler with intelligent monitoring strategy of IGBT module under test

Choi, U. M., Blaabjerg, F. & Iannuzzo, F., Sep 2017, In : Microelectronics Reliability. 76-77, p. 522-526 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

Insulated gate bipolar transistors (IGBT)
modules
Wear of materials
Monitoring
cycles

Impact of bending speed and setup on flex cracks in multilayer ceramic capacitors

Andersson, C., Kristensen, O., Varescon, E. & Iannuzzo, F., Aug 2017, Proceedings of 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED). IEEE Press

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

capacitors
cracks
ceramics
strain rate
microscopy
2015
10 Citations (Scopus)
42 Downloads (Pure)

Evidence of Gate Voltage Oscillations during Short Circuit of Commercial 1.7 kV/ 1 kA IGBT Power Modules

Reigosa, P. D., Wu, R., Iannuzzo, F. & Blaabjerg, F., May 2015, Proceedings of PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag GMBH, p. 916-923 8 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
Short circuit currents
Electric potential
Inductance
Feedback
2014
27 Citations (Scopus)

Online junction temperature measurement via internal gate resistance during turn-on

Baker, N., Munk-Nielsen, S., Liserre, M. & Iannuzzo, F., Aug 2014, Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on. IEEE Press, 10 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Temperature measurement
Semiconductor switches
Insulated gate bipolar transistors (IGBT)
Temperature
Networks (circuits)
2018
1 Citation (Scopus)

Failure protection in power modules with auxiliary-emitter bondwires

Baker, N. & Iannuzzo, F., Jan 2018, PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE VERLAG, p. 1051-1056 6 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Resistors
Explosions
Sensors
2011
1 Citation (Scopus)

Effects of back-side He irradiation on MOS-GTO performances

Ronsisvalle, C., Enea, V., Abbate, C., Busatto, G., Iannuzzo, F., Sanseverino, A. & Cirrone, G. A. P., 1 Dec 2011, ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs. p. 144-147 4 p. 5890811

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

irradiation
proximity
energy dissipation
degradation
life (durability)
2015
19 Citations (Scopus)

Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes

Abbate, C., Busatto, G., Cova, P., Delmonte, N., Giuliani, F., Iannuzzo, F., Sanseverino, A. & Velardi., F., Feb 2015, In : IEEE Transactions on Nuclear Science. 62, 1, p. 202-209 8 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Ion bombardment
Schottky diodes
ion irradiation
Heavy ions
heavy ions
2018
1 Citation (Scopus)
37 Downloads (Pure)

A Multi-Layer RC Thermal Model for Power Modules Adaptable to Different Operating Conditions and Aging

Akbari, M., Bahman, A. S., Tavakoli Bina, M., Eskandari, B., Iannuzzo, F. & Blaabjerg, F., 30 Oct 2018, Proceedings of 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe). IEEE, p. 1-10 10 p. 8515416

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Aging of materials
Thermal aging
Hot Temperature
Circuit simulation
Insulated gate bipolar transistors (IGBT)
2017
4 Citations (Scopus)
61 Downloads (Pure)

Packaging Solutions for Mitigating IGBT Short-Circuit Instabilities

Reigosa, P. D., Iannuzzo, F. & Blaabjerg, F., May 2017, Proceedings of PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag GMBH, p. 1055-1061 7 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
Short circuit currents
Packaging
Inductance
Sensitivity analysis
5 Citations (Scopus)

Role of parasitic capacitances in power MOSFET turn-on switching speed limits: A SiC case study

Cittanti, D., Iannuzzo, F., Hoene, E. & Klein, K., Oct 2017, Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Capacitance
Drain current
Equivalent circuits
Networks (circuits)
Electric potential
2018
1 Citation (Scopus)
92 Downloads (Pure)

A Temperature Dependent Lumped-charge Model for Trench FS-IGBT

Duan, Y., Kang, Y., Iannuzzo, F., Trintis, I. & Blaabjerg, F., 2018, IEEE Applied Power Electronics Conference and Exposition (APEC), 2018: APEC 2018. IEEE Press, p. 249-254 6 p. (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

File
Insulated gate bipolar transistors (IGBT)
Temperature
SPICE
2 Citations (Scopus)
10 Downloads (Pure)

Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses

Bahman, A. S., Jensen, S. M. & Iannuzzo, F., Sep 2018, In : Microelectronics Reliability. 88-90, p. 304-308 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

fuses
Electric fuses
thermal stresses
Thermal stress
manufacturing
2014
506 Downloads (Pure)

Non-Destructive Investigation on Short Circuit Capability of Wind-Turbine-Scale IGBT Power Modules

Wu, R., Iannuzzo, F., Wang, H. & Blaabjerg, F., Oct 2014, Proceedings of the International Conference on Wind energy Grid-Adaptive Technologies, WEGAT 2014. Chungbuk University, Korea, 7 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

File
Insulated gate bipolar transistors (IGBT)
Short circuit currents
Wind turbines
Nondestructive examination
Field programmable gate arrays (FPGA)
2016
143 Downloads (Pure)

Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT

Reigosa, P. D., Prindle, D., Pâques, G., Geissmann, C., Iannuzzo, F., Kopta, A. & Rahimo, M., Sep 2016, In : Microelectronics Reliability. 64, p. 524-529 6 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
short circuits
leakage
Leakage currents
Short circuit currents
1 Citation (Scopus)

Reliability issues in power electronics

Iannuzzo, F. & Ciappa, M., 2016, In : Microelectronics Reliability. 58, p. 1-2 2 p.

Research output: Contribution to journalEditorialResearchpeer-review

2013
5 Citations (Scopus)

Single-event effects in power mosfets during heavy ion irradiations performed after gamma-ray degradation

Busatto, G., De Luca, V., Iannuzzo, F., Sanseverino, A. & Velardi, F., 19 Sep 2013, In : IEEE Transactions on Nuclear Science. 60, 5, p. 3793-3801 9 p., 6596513.

Research output: Contribution to journalJournal articleResearchpeer-review

Ion bombardment
ion irradiation
Heavy ions
Gamma rays
heavy ions
2016

Short-Circuit Robustness Assessment in Power Electronic Modules for Megawatt Applications

Iannuzzo, F., Mar 2016, In : Electronics and Energetics. 29, 1, p. 35-47 9 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Nondestructive examination
Power electronics
Short circuit currents
Silicon carbide
Failure analysis
60 Citations (Scopus)
1111 Downloads (Pure)

A 3D Lumped Thermal Network Model for Long-term Load Profiles Analysis in High Power IGBT Modules

Bahman, A. S., Ma, K., Ghimire, P., Iannuzzo, F. & Blaabjerg, F., Sep 2016, In : I E E E Journal of Emerging and Selected Topics in Power Electronics. 4, 3, p. 1050 - 1063 14 p.

Research output: Contribution to journalJournal articleResearchpeer-review

File
Insulated gate bipolar transistors (IGBT)
Hot Temperature
Power converters
Boundary conditions
Cooling
2014
11 Citations (Scopus)
45 Downloads (Pure)

The Impact of Gate-Driver Parameters Variation and Device Degradation in the PV-Inverter Lifetime

Sintamarean, N. C., Wang, H., Blaabjerg, F. & Iannuzzo, F., Sep 2014, Proceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, p. 2257-2264 8 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Degradation
Feedback
Temperature
Hot Temperature
2019
24 Downloads (Pure)

Implications of Ageing through Power Cycling on the Short Circuit Robustness of 1.2-kV SiC MOSFETs

Reigosa, P. D., Luo, H. & Iannuzzo, F., Nov 2019, In : IEEE Transactions on Power Electronics. 34, 11, p. 11182 - 11190 9 p., 8634945.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Silicon carbide
Short circuit currents
Aging of materials
Degradation
Leakage currents
2018
2 Citations (Scopus)
97 Downloads (Pure)

Online Condition Monitoring of Bond Wire Degradation in Inverter Operation

Gonzalez-Hernando, F., San-Sebastian, J., Garcia-Bediaga, A., Arias, M., Iannuzzo, F. & Blaabjerg, F., Sep 2018, Proceedings of the IEEE Energy Conversion Congress and Exposition (ECCE 2018). USA: IEEE Press, p. 4115 - 4121 7 p. (IEEE Energy Conversion Congress and Exposition).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Condition monitoring
Switching frequency
Wire
Degradation
Insulated gate bipolar transistors (IGBT)
2017
21 Citations (Scopus)
49 Downloads (Pure)

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

Ceccarelli, L., Reigosa, P. D., Iannuzzo, F. & Blaabjerg, F., Sep 2017, In : Microelectronics Reliability. 76-77, p. 272-276 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

Open Access
File
failure modes
short circuits
Short circuit currents
Failure modes
field effect transistors
11 Citations (Scopus)

Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter with Maximum dIC/dt during Turn-off for High Power Trench Gate/Field-Stop IGBT Modules

Chen, Y., Luo, H., Li, W., He, X., Iannuzzo, F. & Blaabjerg, F., Aug 2017, In : IEEE Transactions on Power Electronics. 32, 8, p. 6394-6404 11 p., 7604096.

Research output: Contribution to journalJournal articleResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Temperature
Inductance
2018
2 Citations (Scopus)
123 Downloads (Pure)

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

Akbari, M., Bahman, A. S., Reigosa, P. D., Ceccarelli, L., Iannuzzo, F. & Tavakoli Bina, M., Sep 2018, Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE Press, p. 1-6 6 p. (International Workshop on Thermal Investigations of ICs and Systems).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
MOSFET devices
Thermoanalysis
Temperature distribution
Semiconductor materials
2019
20 Downloads (Pure)

Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

Luo, H., Iannuzzo, F., Baker, N., Blaabjerg, F., Li, W. & He, X., Jun 2019, In : IEEE Journal of Emerging and Selected Topics in Power Electronics.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Silicon carbide
Current density
Wire
Degradation
Aging of materials
2018
7 Citations (Scopus)
8 Downloads (Pure)

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., Sep 2018, In : Microelectronics Reliability. 88-90, p. 577-583 7 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

short circuits
Leakage currents
Short circuit currents
field effect transistors
degradation
2 Citations (Scopus)
20 Downloads (Pure)

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., 1 Sep 2018, In : Microelectronics Reliability. 88-90, p. 661-665 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

short circuits
Short circuit currents
field effect transistors
static characteristics
degradation
2019
24 Downloads (Pure)

Loss and Thermal Modeling of Metal Oxide Varistors (MOV) Under Standard Current Surge Mission Profile

Vernica, I., Jensen, P. T., Wang, H., Iannuzzo, F., Otto, S. & Blaabjerg, F., Sep 2019, Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE). USA: IEEE Press, p. 7113-7117 5 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Varistors
Oxides
Metals
Hot Temperature
Power electronics
2017
9 Citations (Scopus)
550 Downloads (Pure)

A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

Ceccarelli, L., Bahman, A. S., Iannuzzo, F. & Blaabjerg, F., Mar 2017, Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, p. 966-973 8 p. (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Computer simulation
High temperature operations
MATLAB
Energy dissipation
Finite element method
2019
2 Citations (Scopus)
30 Downloads (Pure)

Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy

Ceccarelli, L., Kotecha, R. M., Bahman, A. S., Iannuzzo, F. & Mantooth, H. A., Oct 2019, In : IEEE Transactions on Power Electronics. 34, 10, p. 9698-9708 11 p., 8616890.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Topology
Power converters
Reliability analysis
Specifications
Finite element method
13 Downloads (Pure)

Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests

Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., Mar 2019, Proceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019). IEEE Press, p. 332-337 6 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Short circuit currents
Temperature
Bias voltage
Leakage currents
Wire
2017

Power Electronics and Drive Systems

Blaabjerg, F., Iannuzzo, F. & Ceccarelli, L., Nov 2017, Multiphysics Simulation by Design for Electrical Machines, Power Electronics and Drives. Rosu, M., Zhou, P., Lin, D., Ionel, D., Popescu, M., Blaabjerg, F., Rallabandi, V. & Staton, D. (eds.). Wiley-IEEE press, p. 251-281 31 p.

Research output: Contribution to book/anthology/report/conference proceedingBook chapterResearchpeer-review

Power electronics
Networks (circuits)
Switches
2019

Wear-out evolution analysis of multiple-bond-wires power modules based on thermo-electro-mechanical FEM simulation

Jiang, M., Fu, G., Fogsgaard, M. B., Bahman, A. S., Yang, Y. & Iannuzzo, F., Sep 2019, In : Microelectronics Reliability. 100-101, 6 p., 113472.

Research output: Contribution to journalJournal articleResearchpeer-review

finite element method
Wear of materials
wire
Wire
Cracks
2014
1 Citation (Scopus)

Mechanoluminescence of nylon under high velocity impact

Bonora, N., Ruggiero, A., Iannitti, G., Abbate, C., Iannuzzo, F. & Busatto, G., 1 Jan 2014, In : Journal of Physics: Conference Series (Online). 500, PART 18, 182005.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
Nylon (trademark)
impact velocity
light emission
anvils
rods
2016
17 Citations (Scopus)
629 Downloads (Pure)

Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Gurpinar, E., Yang, Y., Iannuzzo, F., Castellazzi, A. & Blaabjerg, F., Sep 2016, In : I E E E Journal of Emerging and Selected Topics in Power Electronics. 4, 3, p. 956-969 14 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
High electron mobility transistors
Switching frequency
Reliability analysis
Thermal stress
2014
13 Citations (Scopus)
1170 Downloads (Pure)

A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Wu, R., Wang, H., Ma, K., Ghimire, P., Iannuzzo, F. & Blaabjerg, F., Sep 2014, Proceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, p. 2901-2908 8 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

File
Insulated gate bipolar transistors (IGBT)
Networks (circuits)
Temperature
Heat resistance
Thermal effects
2018
118 Downloads (Pure)

Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module

Nawaz, M., Bezentes, N., Iannuzzo, F. & Ilves, K., Sep 2018, Proceedings of the 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018. IEEE Press, p. 3547-3554 8 p. 8557772. (IEEE Energy Conversion Congress and Exposition).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Equivalent circuits
Inductance
Switches
Networks (circuits)
Computer simulation
2015
15 Citations (Scopus)

Robustness of MW-Level IGBT modules against gate oscillations under short circuit events

Reigosa, P. D., Wu, R., Iannuzzo, F. & Blaabjerg, F., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1950-1955 6 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Insulated gate bipolar transistors (IGBT)
short circuits
Short circuit currents
modules
oscillations
2012

Editorial

Ciappa, M., Cova, P., Iannuzzo, F. & Meneghesso, G., 1 Sep 2012, In : Microelectronics Reliability. 52, 9-10, p. 1751-1752 2 p.

Research output: Contribution to journalJournal articleResearchpeer-review