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2016

Experimental Evaluation of IGBT Junction Temperature Measurement via a Modified-VCE (ΔVCE_ΔVGE) Method with Series Resistance Removal

Baker, N., Iannuzzo, F., Munk-Nielsen, S., Dupont, L. & Avenas, Y., Mar 2016, Proceedings of CIPS 2016; 9th International Conference on Integrated Power Electronics Systems. VDE Verlag GMBH, 6 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Temperature measurement
Packaging materials
Electric potential
Temperature
2015
15 Citations (Scopus)

Robustness of MW-Level IGBT modules against gate oscillations under short circuit events

Reigosa, P. D., Wu, R., Iannuzzo, F. & Blaabjerg, F., 1 Aug 2015, In : Microelectronics Reliability. 55, 9-10, p. 1950-1955 6 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Insulated gate bipolar transistors (IGBT)
short circuits
Short circuit currents
modules
oscillations
2017
3 Citations (Scopus)

Active Thermal Control by Controlled Shoot-through of Power Devices

Soldati, A., Concari, C., Barater, D., Iannuzzo, F. & Blaabjerg, F., Oct 2017, Proceedings of 43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017. IEEE Press, p. 4363-4368 6 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Switches
Topology
Hot Temperature
Temperature
2015
10 Citations (Scopus)
43 Downloads (Pure)

Evidence of Gate Voltage Oscillations during Short Circuit of Commercial 1.7 kV/ 1 kA IGBT Power Modules

Reigosa, P. D., Wu, R., Iannuzzo, F. & Blaabjerg, F., May 2015, Proceedings of PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag GMBH, p. 916-923 8 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
Short circuit currents
Electric potential
Inductance
Feedback
2016
11 Citations (Scopus)

Development of Simulink-Based SiC MOSFET Modeling Platform for Series Connected Devices

Tsolaridis, G., Ilves, K., Reigosa, P. D., Nawaz, M. & Iannuzzo, F., Sep 2016, Proceedings of IEEE Energy Conversion Congress and Exposition (ECCE), 2016. IEEE Press, 8 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

MATLAB
Electric potential
Power MOSFET
2019
1 Citation (Scopus)

SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

Marroqui, D., Garrigos, A., Blanes, J. M., Gutierrez, R., Maset, E. & Iannuzzo, F., Sep 2019, In : Microelectronics Reliability. 100-101, 113429.

Research output: Contribution to journalJournal articleResearchpeer-review

short circuits
Short circuit currents
field effect transistors
Semiconductor materials
Junction gate field effect transistors

Effects of the HV-BIGT Design Elements on the High-Frequency Oscillation Instability during Short Circuit Transients

Reigosa, P. D., Papadopoulos, C., Iannuzzo, F., Corvasce, C. & Rahimo, M., May 2019, Proceedings of 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE Signal Processing Society, p. 55-58 4 p. 8757575. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Vol. 2019-May).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Short circuit currents
Insulated gate bipolar transistors (IGBT)
Transistors
Irradiation

Guest Editorial: Special Section on Modeling, Design, and Application of Next-Generation Power Components

Iannuzzo, F. & Shen, J., Sep 2019, In : IEEE Journal of Emerging and Selected Topics in Power Electronics. 7, 3, p. 1422-1424 3 p., 8782663.

Research output: Contribution to journalEditorialResearchpeer-review

Power generation
Condition monitoring
Semiconductor devices
Power electronics
Energy gap
2018
10 Downloads (Pure)

Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings

Choi, U. M., Jørgensen, S., Iannuzzo, F. & Blaabjerg, F., Sep 2018, In : Microelectronics Reliability. 88-90, p. 788-794 7 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

Insulated gate bipolar transistors (IGBT)
modules
cycles
Power electronics
Temperature
2016
4 Citations (Scopus)

Reliability Assessment of SiC Power MOSFETs From The End User's Perspective

Karaventzas, V. D., Nawaz, M. & Iannuzzo, F., Sep 2016, Proceedings of IEEE Energy Conversion Congress and Exposition 2016 (ECCE). IEEE Press, 8 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

MOSFET devices
Silicon carbide
Packaging materials
Atmospheric humidity
Packaging
2018
1 Citation (Scopus)

Failure protection in power modules with auxiliary-emitter bondwires

Baker, N. & Iannuzzo, F., Jan 2018, PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE VERLAG, p. 1051-1056 6 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Resistors
Explosions
Sensors
2016
9 Citations (Scopus)
233 Downloads (Pure)

Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

Reigosa, P. D., Luo, H., Iannuzzo, F. & Blaabjerg, F., Sep 2016, Proceedings of 8th IEEE Energy Conversion Congress and Exposition (ECCE), 2016. IEEE Press, 6 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Short circuit currents
Power MOSFET
Electric potential
2018
2 Citations (Scopus)
10 Downloads (Pure)

Smart SiC MOSFET accelerated lifetime testing

Baker, N. & Iannuzzo, F., Sep 2018, In : Microelectronics Reliability. 88-90, p. 43-47 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

field effect transistors
Semiconductor materials
life (durability)
Monitoring
Testing
2011
5 Citations (Scopus)

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

Busatto, G., Bisello, D., Curr, G., Giubilato, P., Iannuzzo, F., Mattiazzo, S., Pantano, D., Sanseverino, A., Silvestrin, L., Tessaro, M., Velardi, F. & Wyss, J., 1 Sep 2011, In : Microelectronics Reliability. 51, 9-11, p. 1995-1998 4 p.

Research output: Contribution to journalJournal articleResearchpeer-review

field effect transistors
methodology
programming environments
ion emission
sensitivity
2017
5 Citations (Scopus)

Comparative assessment of 3.3kV/400A SiC MOSFET and Si IGBT power modules

Ionita, C., Nawaz, M., Ilves, K. & Iannuzzo, F., Oct 2017, Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Short circuit currents
Electric potential
Leakage currents
Energy dissipation
2019

Enhancement of Thermo-mechanical Behavior of IGBT Modules through Engineered Threshold Voltages

Akbari, M., Reigosa, P. D., Bahman, A. S., Ceccarelli, L., Iannuzzo, F. & Bina, M. T., Sep 2019, Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe). IEEE Press, 9 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Threshold voltage
Temperature distribution
Current density
Finite element method
3 Citations (Scopus)
98 Downloads (Pure)

The Temperature Dependence of the Flatband Voltage in High Power IGBTs

Baker, N. R. & Iannuzzo, F., Jul 2019, In : IEEE Transactions on Industrial Electronics. 66, 7, p. 5581 - 5584 4 p., 8411445.

Research output: Contribution to journalLetterResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
Electric potential
Temperature
Temperature measurement
Power bipolar transistors
2017
1 Citation (Scopus)
75 Downloads (Pure)

Capacitive effects in IGBTs limiting their reliability under short circuit

Reigosa, P. D., Iannuzzo, F., Rahimo, M. & Blaabjerg, F., 2017, In : Microelectronics Reliability. 76-77, p. 485-489 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
short circuits
Short circuit currents
oscillations
Circuit oscillations
4 Citations (Scopus)
64 Downloads (Pure)

Packaging Solutions for Mitigating IGBT Short-Circuit Instabilities

Reigosa, P. D., Iannuzzo, F. & Blaabjerg, F., May 2017, Proceedings of PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag GMBH, p. 1055-1061 7 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
Short circuit currents
Packaging
Inductance
Sensitivity analysis
2016
29 Citations (Scopus)

A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Wu, R., Wang, H., Pedersen, K. B., Ma, K., Ghimire, P., Iannuzzo, F. & Blaabjerg, F., Jul 2016, In : I E E E Transactions on Industry Applications. 52, 4, p. 3306 - 3314 9 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Networks (circuits)
Temperature
Temperature control
Short circuit currents
2015
72 Citations (Scopus)

Reliability Oriented Design Tool For the New Generation of Grid Connected PV-Inverters

Sintamarean, N. C., Blaabjerg, F., Wang, H., Iannuzzo, F. & De Place Rimmen, P., May 2015, In : IEEE Transactions on Power Electronics. 30, 5, p. 2635-2644 10 p., 6926812.

Research output: Contribution to journalJournal articleResearchpeer-review

Degradation
Aging of materials
Feedback
Temperature
Hot Temperature
2019

Reliability analysis of a 3-leg 4-wire inverter under unbalanced loads and harmonic injection

Lledo-Ponsati, T., Bahman, A. S., Iannuzzo, F., Montesinos-Miracle, D. & Arellano, S. G., Jun 2019, Proceedings of 2019 20th Workshop on Control and Modeling for Power Electronics (COMPEL). IEEE Signal Processing Society, 8769662. (IEEE Workshop on Control and Modeling for Power Electronics (COMPEL) ).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Reliability analysis
Capacitors
Wire
Semiconductor materials
Degradation

Impact of device aging in the compact electro-thermal modeling of SiC power MOSFETs

Ceccarelli, L., Bahman, A. S. & Iannuzzo, F., Sep 2019, In : Microelectronics Reliability. 100-101, 113336.

Research output: Contribution to journalJournal articleResearchpeer-review

field effect transistors
Aging of materials
thermal stresses
Thermal stress
traction
2014
11 Citations (Scopus)
45 Downloads (Pure)

The Impact of Gate-Driver Parameters Variation and Device Degradation in the PV-Inverter Lifetime

Sintamarean, N. C., Wang, H., Blaabjerg, F. & Iannuzzo, F., Sep 2014, Proceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, p. 2257-2264 8 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Degradation
Feedback
Temperature
Hot Temperature
2020
24 Downloads (Pure)

Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

Luo, H., Iannuzzo, F., Baker, N., Blaabjerg, F., Li, W. & He, X., 2020, In : IEEE Journal of Emerging and Selected Topics in Power Electronics.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Silicon carbide
Current density
Wire
Degradation
Aging of materials
2017
2 Citations (Scopus)

Elimination of bus voltage impact on temperature sensitive electrical parameter during turn-on transition for junction temperature estimation of high-power IGBT modules

Luo, H., Iannuzzo, F., Blaabjerg, F., Wang, X. & Li, W., Oct 2017, Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, p. 5892-5898 7 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Electric potential
Temperature
Time delay
Experiments
2 Citations (Scopus)

Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design

Luo, H., Li, W., He, X., Iannuzzo, F. & Blaabjerg, F., Sep 2017, In : Microelectronics Reliability. 76-77, p. 123-130 8 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Thermal effects
temperature effects
platforms
evaluation
2019
3 Citations (Scopus)
106 Downloads (Pure)

A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

Duan, Y., Xiao, F., Luo, Y. & Iannuzzo, F., Mar 2019, In : IEEE Journal of Emerging and Selected Topics in Power Electronics. 7, 1, p. 62-70 9 p., 8482289.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
SPICE
Temperature
Physics
Experiments

Wear-Out Condition Monitoring of IGBT and mosfet Power Modules in Inverter Operation

Gonzalez-Hernando, F., San-Sebastian, J., Garcia-Bediaga, A., Arias, M., Iannuzzo, F. & Blaabjerg, F., Nov 2019, In : I E E E Transactions on Industry Applications. 55, 6, p. 6184 - 6192 9 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Condition monitoring
Wear of materials
Wire
Semiconductor materials
2014
5 Citations (Scopus)
1033 Downloads (Pure)

Round busbar concept for 30 nH, 1.7 kV, 10 kA IGBT non-destructive short-circuit tester

Smirnova, L., Pyrhönen, J., Iannuzzo, F., Wu, R. & Blaabjerg, F., Aug 2014, Proceedings of the 16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe. Lappeenranta, Finland: IEEE Press, p. 1-9 9 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

File
Busbars
Insulated gate bipolar transistors (IGBT)
Inductance
Short circuit currents
Power converters
2018
2 Citations (Scopus)
104 Downloads (Pure)

Online Condition Monitoring of Bond Wire Degradation in Inverter Operation

Gonzalez-Hernando, F., San-Sebastian, J., Garcia-Bediaga, A., Arias, M., Iannuzzo, F. & Blaabjerg, F., Sep 2018, Proceedings of the IEEE Energy Conversion Congress and Exposition (ECCE 2018). USA: IEEE Press, p. 4115 - 4121 7 p. (IEEE Energy Conversion Congress and Exposition).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Condition monitoring
Switching frequency
Wire
Degradation
Insulated gate bipolar transistors (IGBT)
1 Citation (Scopus)
74 Downloads (Pure)

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Ceccarelli, L., Kotecha, R., Iannuzzo, F. & Mantooth, A., Nov 2018, Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018. IEEE Press, p. 1-6 6 p. 8590288

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Circuit simulation
Power electronics
Topology
Finite element method
Hot Temperature
2016
1 Citation (Scopus)

Effects of uneven temperature of IGBT and diode on switching characteristics of bridge legs in MW-level power converters

Luo, H., Iannuzzo, F., Blaabjerg, F., Li, W. & He, X., Jun 2016, Proceedings of 7th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 2016 IEEE. IEEE Press, 7 p. 7. (2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems (PEDG) ).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Power converters
Diodes
Electric commutation
Temperature control
2013

Radiation performance of new semiconductor power devices for the LHC experiment upgrades

Abbate, C., Alderighi, M., Baccaro, S., Busatto, G., Citterio, M., Cova, P., Delmonte, N., De Luca, V., Fiore, S., Gerardin, S., Ghisolfi, E., Giuliani, F., Iannuzzo, F., Lanza, A., Latorre, S., Lazzaroni, M., Meneghesso, G., Paccagnella, A., Rampazzo, F., Riva, M. & 5 others, Sanseverino, A., Silvestri, R., Spiazzi, G., Velardi, F. & Zanoni, E., 1 Jan 2013, In : Proceedings of Science. 2013-July

Research output: Contribution to journalConference article in JournalResearchpeer-review

bromine
threshold voltage
iodine
rays
heavy ions
2016
61 Citations (Scopus)
1138 Downloads (Pure)

A 3D Lumped Thermal Network Model for Long-term Load Profiles Analysis in High Power IGBT Modules

Bahman, A. S., Ma, K., Ghimire, P., Iannuzzo, F. & Blaabjerg, F., Sep 2016, In : I E E E Journal of Emerging and Selected Topics in Power Electronics. 4, 3, p. 1050 - 1063 14 p.

Research output: Contribution to journalJournal articleResearchpeer-review

File
Insulated gate bipolar transistors (IGBT)
Hot Temperature
Power converters
Boundary conditions
Cooling
2020
23 Downloads (Pure)

Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling

Jia, Y., Huang, Y., Xiao, F., Deng, H., Duan, Y. & Iannuzzo, F., 2020, In : IEEE Journal of Emerging and Selected Topics in Power Electronics.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
Soldering alloys
Degradation
Experiments
Heat resistance

Compact Sandwiched Press-Pack SiC Power Module with Low Stray Inductance and Balanced Thermal Stress

Chang, Y., Luo, H., Iannuzzo, F., Bahman, A. S., Li, W., He, X. & Blaabjerg, F., Mar 2020, In : IEEE Transactions on Power Electronics . 35, 3, p. 2237 - 2241 5 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Thermal stress
Inductance
Busbars
Heat resistance
Cooling
2019

A Busbar Integrated SiC-based Converter with Embedded Heat-pipes

Chang, Y., Bahman, A. S., Luo, H., Li, W., He, X., Iannuzzo, F. & Blaabjerg, F., May 2019, Proceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia). IEEE Press, p. 2166-2172 7 p. 8796953. (International Conference on Power Electronics).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Busbars
Heat pipes
Packaging
Temperature control
Thermal stress
2016
15 Citations (Scopus)

Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview

Luo, H., Iannuzzo, F., Diaz Reigosa, P., Blaabjerg, F., Li, W. & He, X., 2016, In : Microelectronics Reliability. 58, p. 141-150 10 p.

Research output: Contribution to journalJournal articleResearchpeer-review

power converters
Insulated gate bipolar transistors (IGBT)
Power converters
bipolar transistors
Electric potential
2018
2 Citations (Scopus)
10 Downloads (Pure)

Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses

Bahman, A. S., Jensen, S. M. & Iannuzzo, F., Sep 2018, In : Microelectronics Reliability. 88-90, p. 304-308 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

fuses
Electric fuses
thermal stresses
Thermal stress
manufacturing
2017
5 Citations (Scopus)

Role of parasitic capacitances in power MOSFET turn-on switching speed limits: A SiC case study

Cittanti, D., Iannuzzo, F., Hoene, E. & Klein, K., Oct 2017, Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Capacitance
Drain current
Equivalent circuits
Networks (circuits)
Electric potential
2015
14 Citations (Scopus)

Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System

Wu, R., Diaz Reigosa, P., Iannuzzo, F., Smirnova, L., Wang, H. & Blaabjerg, F., 1 Sep 2015, In : I E E E Journal of Emerging and Selected Topics in Power Electronics. 3, 3, p. 756-765 10 p., 7064726.

Research output: Contribution to journalJournal articleResearchpeer-review

Insulated gate bipolar transistors (IGBT)
Nondestructive examination
Short circuit currents
Transconductance
Inductance
2012
2 Citations (Scopus)

Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure

Busatto, G., De Luca, V., Iannuzzo, F., Sanseverino, A. & Velardi, F., 1 Sep 2012, In : Microelectronics Reliability. 52, 9-10, p. 2363-2367 5 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Heavy Ions
Ion bombardment
ion irradiation
Heavy ions
rays
2016
7 Citations (Scopus)

Loss Distribution Analysis of Three-Level Active Neutral-Point-Clamped (3L-ANPC) Converter with Different PWM Strategies

Zhang, G., Yang, Y., Iannuzzo, F., Li, K., Blaabjerg, F. & Xu, H., Dec 2016, Proceedings of the IEEE Southern Power Electronics Conference (SPEC), 2016. IEEE Press, 6 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Pulse width modulation
Topology
Benchmarking
Modulation
2017
21 Citations (Scopus)
60 Downloads (Pure)

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

Ceccarelli, L., Reigosa, P. D., Iannuzzo, F. & Blaabjerg, F., Sep 2017, In : Microelectronics Reliability. 76-77, p. 272-276 5 p.

Research output: Contribution to journalConference article in JournalResearchpeer-review

Open Access
File
failure modes
short circuits
Short circuit currents
Failure modes
field effect transistors

Power Electronics and Drive Systems

Blaabjerg, F., Iannuzzo, F. & Ceccarelli, L., Nov 2017, Multiphysics Simulation by Design for Electrical Machines, Power Electronics and Drives. Rosu, M., Zhou, P., Lin, D., Ionel, D., Popescu, M., Blaabjerg, F., Rallabandi, V. & Staton, D. (eds.). Wiley-IEEE press, p. 251-281 31 p.

Research output: Contribution to book/anthology/report/conference proceedingBook chapterResearchpeer-review

Power electronics
Networks (circuits)
Switches
2018
51 Downloads (Pure)

Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

Valente, M., Iannuzzo, F., Yang, Y. & Gurpinar, E., Dec 2018, Proceedings of 2018 IEEE 4th Southern Power Electronics Conference (SPEC). IEEE Press, 8 p.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Open Access
File
Gallium nitride
High electron mobility transistors
Power electronics
Topology
Silicon
2016
17 Citations (Scopus)
633 Downloads (Pure)

Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Gurpinar, E., Yang, Y., Iannuzzo, F., Castellazzi, A. & Blaabjerg, F., Sep 2016, In : I E E E Journal of Emerging and Selected Topics in Power Electronics. 4, 3, p. 956-969 14 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Insulated gate bipolar transistors (IGBT)
High electron mobility transistors
Switching frequency
Reliability analysis
Thermal stress
2018
11 Citations (Scopus)
92 Downloads (Pure)

Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

Gurpinar, E., Iannuzzo, F., Yang, Y., Castellazzi, A. & Blaabjerg, F., Mar 2018, In : I E E E Transactions on Industry Applications. 54, 2, p. 1592-1601 10 p.

Research output: Contribution to journalJournal articleResearchpeer-review

Open Access
File
Gallium nitride
High electron mobility transistors
Inductance
Gates (transistor)
Electric commutation
2015

Method for Driving Inverters, and Inverter Adapted to Reduce Switching Losses

Busatto, G., Fratelli, L., Iannuzzo, F. & Abbate, C., 2015, Patent No. PCT/IB2013/061221, 26 Jun 2014, Priority date 20 Dec 2012, Priority No. TO2012A001112

Research output: Patent

Open Access