A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET

A. Porzio*, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò

*Corresponding author

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

6 Citations (Scopus)

Abstract

In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.
Original languageEnglish
Title of host publication2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008
Number of pages4
Publication date1 Dec 2008
Pages209-212
Article number5782713
ISBN (Print)9781457704819
DOIs
Publication statusPublished - 1 Dec 2008
Externally publishedYes
Event8th European Workshop on Radiation and Its Effects on Components and Systems, RADECS 2008 - Jyvaskyla, Finland
Duration: 10 Sep 200812 Sep 2008

Conference

Conference8th European Workshop on Radiation and Its Effects on Components and Systems, RADECS 2008
CountryFinland
CityJyvaskyla
Period10/09/200812/09/2008
SponsorThe University of Jyvaskyla together with ESA, City of Jyvaskyla, Academy of Finland, Finnish Technology Agency, Finnish Nanotechnology Cluster Programme

Keywords

  • Latent damage
  • Power MOSFETs
  • SEGR

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