A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET

A. Porzio; F. Velardi; G. Busatto; F. Iannuzzo; A. Sanseverino; G. Currò

doi:10.1109/RADECS.2008.5782713

A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET

A. Porzio^*, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò

^*Corresponding author for this work

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

7 Citations (Scopus)

Abstract

In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.

Original language	English
Title of host publication	2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008
Number of pages	4
Publication date	1 Dec 2008
Pages	209-212
Article number	5782713
ISBN (Print)	9781457704819
DOIs	https://doi.org/10.1109/RADECS.2008.5782713
Publication status	Published - 1 Dec 2008
Externally published	Yes
Event	8th European Workshop on Radiation and Its Effects on Components and Systems, RADECS 2008 - Jyvaskyla, Finland Duration: 10 Sept 2008 → 12 Sept 2008

Conference

Conference	8th European Workshop on Radiation and Its Effects on Components and Systems, RADECS 2008
Country/Territory	Finland
City	Jyvaskyla
Period	10/09/2008 → 12/09/2008
Sponsor	The University of Jyvaskyla together with ESA, City of Jyvaskyla, Academy of Finland, Finnish Technology Agency, Finnish Nanotechnology Cluster Programme

Keywords

Latent damage
Power MOSFETs
SEGR

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10.1109/RADECS.2008.5782713

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Cite this

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title = "A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET",

abstract = "In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.",

keywords = "Latent damage, Power MOSFETs, SEGR",

author = "A. Porzio and F. Velardi and G. Busatto and F. Iannuzzo and A. Sanseverino and G. Curr{\`o}",

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booktitle = "2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008",

note = "8th European Workshop on Radiation and Its Effects on Components and Systems, RADECS 2008 ; Conference date: 10-09-2008 Through 12-09-2008",

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Porzio, A, Velardi, F, Busatto, G, Iannuzzo, F, Sanseverino, A & Currò, G 2008, A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET. in 2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008., 5782713, pp. 209-212, 8th European Workshop on Radiation and Its Effects on Components and Systems, RADECS 2008, Jyvaskyla, Finland, 10/09/2008. https://doi.org/10.1109/RADECS.2008.5782713

A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET. / Porzio, A.; Velardi, F.; Busatto, G. et al.
2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008. 2008. p. 209-212 5782713.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

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T1 - A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET

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AU - Velardi, F.

AU - Busatto, G.

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AU - Sanseverino, A.

AU - Currò, G.

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KW - Power MOSFETs

KW - SEGR

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A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET

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Keywords

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