A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET

A. Porzio*, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò

*Corresponding author

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

6 Citations (Scopus)

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Engineering & Materials Science