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A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET
A. Porzio*, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò
*Corresponding author for this work
Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review
7
Citations
(Scopus)