A 3D thermal network model for monitoring imbalanced thermal distribution of press-pack IGBT modules in MMC-HVDC applications

Yao Chang, Wuhua Li*, Haoze Luo, Xiangning He, Francesco Iannuzzo, Frede Blaabjerg, Weixing Lin

*Corresponding author

Research output: Contribution to journalJournal articleResearchpeer-review

3 Citations (Scopus)
35 Downloads (Pure)

Abstract

In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-chip thermal coupling effect for the collector side of the PP IGBT. Moreover, a verification has been made by comparing the proposed matrix thermal network model and the conventional lumped RC network model provided by the manufacturer. It is concluded that the collector side has lower thermal resistance and dissipates about 88% of the heat generated by the IGBT chips inside the module. Then, a modular-multilevel-converter high-voltage-direct-current (MMC-HVDC)-based type test setup composed of the press-pack IGBT stacks is established and the junction temperature is calculated with the proposed thermal model and verified by temperature measurements.
Original languageEnglish
Article number1319
JournalEnergies
Volume12
Issue number7
Number of pages20
ISSN1996-1073
DOIs
Publication statusPublished - Apr 2019

Keywords

  • Insulated-gate-bipolar-transistor (IGBT)
  • Modular-multilevel-converter high-voltage-direct-current (MMC-HVDC)
  • Press-pack
  • Temperature imbalance

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