A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs

P. Xue*, L. Maresca, M. Riccio, G. Breglio, A. Irace

*Corresponding author

Research output: Contribution to journalJournal articleResearchpeer-review

Original languageEnglish
JournalIEEE Transactions on Electron Devices
Volume67
Issue number11
Pages (from-to)4849-4857
Number of pages9
ISSN0018-9383
DOIs
Publication statusPublished - 2020
Externally publishedYes

Keywords

  • circuit oscillations
  • gallium compounds
  • high electron mobility transistors
  • III-V semiconductors
  • semiconductor device models
  • SPICE
  • wide band gap semiconductors
  • short-circuit oscillation
  • HEMT
  • short-circuit instability
  • self-sustained SC oscillation
  • oscillation suppression methods
  • p-doped gate gallium nitride
  • high-electron-mobility transistors
  • package stray inductance
  • dc-bus voltage
  • common source inductance
  • converter operation
  • SPICE simulation
  • simulated waveform analysis
  • positive feedback system
  • power loop
  • gate loop
  • stray inductances
  • GaN
  • Oscillators
  • HEMTs
  • MODFETs
  • Logic gates
  • Inductance
  • Integrated circuit modeling
  • Gallium nitride
  • Gallium nitride (GaN)
  • electron-mobility transistors (HEMTs)
  • p-GaN HEMTs
  • self-sustained oscillation
  • short-circuit (SC)

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