A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

Rui Wu, Paula Diaz Reigosa, Francesco Iannuzzo, Huai Wang, Frede Blaabjerg

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

7 Citations (Scopus)
648 Downloads (Pure)

Abstract

This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.
Original languageEnglish
Title of host publicationProceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)
Number of pages9
PublisherIEEE Press
Publication dateSep 2015
Pages1-9
DOIs
Publication statusPublished - Sep 2015
Event17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20, Geneva, Switzerland
Duration: 8 Sep 201510 Sep 2015

Conference

Conference17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
LocationCentre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20
CountrySwitzerland
CityGeneva
Period08/09/201510/09/2015

Keywords

  • Insulated-Gate Bipolar Transistor (IGBT)
  • Power Modules
  • Short Circuit
  • Current Distribution

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