A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

Rui Wu; Paula Diaz Reigosa; Francesco Iannuzzo; Huai Wang; Frede Blaabjerg

doi:10.1109/EPE.2015.7311761

A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

Rui Wu, Paula Diaz Reigosa, Francesco Iannuzzo, Huai Wang, Frede Blaabjerg

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

8 Citations (Scopus)

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Abstract

This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.

Original language	English
Title of host publication	Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)
Number of pages	9
Publisher	IEEE Press
Publication date	Sept 2015
Pages	1-9
DOIs	https://doi.org/10.1109/EPE.2015.7311761
Publication status	Published - Sept 2015
Event	17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20, Geneva, Switzerland Duration: 8 Sept 2015 → 10 Sept 2015

Conference

Conference	17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
Location	Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20
Country/Territory	Switzerland
City	Geneva
Period	08/09/2015 → 10/09/2015

Keywords

Insulated-Gate Bipolar Transistor (IGBT)
Power Modules
Short Circuit
Current Distribution

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10.1109/EPE.2015.7311761

A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power ModulesSubmitted manuscript, 578 KB

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Cite this

@inproceedings{c1bfd27dcc344e28ac3a902034a7201c,

title = "A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules",

abstract = "This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.",

keywords = "Insulated-Gate Bipolar Transistor (IGBT), Power Modules, Short Circuit, Current Distribution",

author = "Rui Wu and Reigosa, {Paula Diaz} and Francesco Iannuzzo and Huai Wang and Frede Blaabjerg",

year = "2015",

month = sep,

doi = "10.1109/EPE.2015.7311761",

language = "English",

pages = "1--9",

booktitle = "Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)",

publisher = "IEEE Press",

note = "17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, IEEE ECCE-EPE 2015 ; Conference date: 08-09-2015 Through 10-09-2015",

}

Wu, R, Reigosa, PD, Iannuzzo, F , Wang, H & Blaabjerg, F 2015, A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules. in Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press, pp. 1-9, 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, Geneva, Switzerland, 08/09/2015. https://doi.org/10.1109/EPE.2015.7311761

A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules. / Wu, Rui; Reigosa, Paula Diaz; Iannuzzo, Francesco et al.
Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE Press, 2015. p. 1-9.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

AU - Wu, Rui

AU - Reigosa, Paula Diaz

AU - Iannuzzo, Francesco

AU - Wang, Huai

AU - Blaabjerg, Frede

PY - 2015/9

Y1 - 2015/9

N2 - This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.

AB - This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.

KW - Insulated-Gate Bipolar Transistor (IGBT)

KW - Power Modules

KW - Short Circuit

KW - Current Distribution

U2 - 10.1109/EPE.2015.7311761

DO - 10.1109/EPE.2015.7311761

M3 - Article in proceeding

SP - 1

EP - 9

BT - Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)

PB - IEEE Press

T2 - 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015

Y2 - 8 September 2015 through 10 September 2015

ER -

A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

Abstract

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Keywords

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