Abstract
This letter proposes a fully integrated 0.01-40-GHz Darlington-cascode distributed amplifier (DA) fabricated using a commercial 0.15-μ m GaAs pHEMT process. Analysis indicates that the Darlington-cascode gain cell (DCGC) can enhance gain, bandwidth, and output power simultaneously. The first and last stages of the DA can be considered equivalent to two m-derived matching sections, optimizing the return loss at the input port. An ON-chip dc-fed network is employed for biasing the DA. The chip area of the DA is about 1.8×1.5 mm. Measurement results demonstrate that the DA achieves a gain of 11 dB with ±1.5-dB flatness, 14%-24% power-added efficiency (PAE), and 17.2-19.5-dBm saturated output power.
| Original language | English |
|---|---|
| Journal | I E E E Microwave and Wireless Components Letters |
| Volume | 34 |
| Issue number | 5 |
| Pages (from-to) | 524-527 |
| Number of pages | 4 |
| ISSN | 1531-1309 |
| DOIs | |
| Publication status | Published - May 2024 |
Keywords
- Bandwidth
- Darlington-Cascode
- Distributed amplifiers
- GaAs pHEMT
- Gain
- wideband
- Cascode
- Darlington
- distributed amplifier (DA)
- gain