Abstract
Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) is widely used in isolated bi-directional DC-DC converters for electric vehicle charger, photovoltaic system, datacenter, etc. The trend of isolated bi-directional DC-DC converters is high efficiency, high frequency and high power density. In this paper, a 400W 400V/18V~25V two-stage GaN-based isolated bi-directional DC-DC converter is proposed. A low cost three PCBs stacked structure is proposed to design LLC transformer and Buck/Boost filter inductor. Finally, a standalone prototype converter is demonstrated to verify the front design. The prototype achieves peak closed-loop efficiency of 96.5%, closed-loop control error less than 1% and power density of 107W/in3.
| Original language | English |
|---|---|
| Book series | 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019 |
| Pages (from-to) | 3240-3244 |
| Number of pages | 5 |
| DOIs | |
| Publication status | Published - Sept 2019 |
| Externally published | Yes |
| Event | 11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019 - Baltimore, United States Duration: 29 Sept 2019 → 3 Oct 2019 |
Conference
| Conference | 11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019 |
|---|---|
| Country/Territory | United States |
| City | Baltimore |
| Period | 29/09/2019 → 03/10/2019 |
| Sponsor | IEEE Industry Application Society (IAS), IEEE Power Electronics Society (PELS) |
Bibliographical note
Publisher Copyright:© 2019 IEEE.
Keywords
- Gallium Nitride
- High-electron-mobility transistor
- LLC resonant converter
- Planar transformer