A Lumped Thermal Model Including Thermal Coupling and Thermal Boundary Conditions for High Power IGBT Modules

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Abstract

Detailed thermal dynamics of high-power IGBT modules are important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behavior in the IGBTs: The typically used thermal model based on one-dimensional RC lumps have limits to provide temperature distributions inside the device; moreover, some variable factors in the real-field applications like the cooling and heating conditions of the converter cannot be adapted. On the other hand, the more advanced three-dimensional (3-D) thermal models based on finite-element method (FEM) need massive computations, which make the long-term thermal dynamics difficult to calculate. In this paper, a new lumped 3-D thermal model is proposed, which can be easily characterized from FEM simulations and can acquire the critical thermal distribution under long-term studies. Meanwhile, the boundary conditions for the thermal analysis are modeled and included, which can be adapted to different real-field applications of power electronic converters. Finally, the accuracy of the proposed thermal model is verified by FEM simulations and experimental results show a good agreement.

Original languageEnglish
Article number7903728
JournalI E E E Transactions on Power Electronics
Volume33
Issue number3
Pages (from-to)2518 - 2530
Number of pages13
ISSN0885-8993
DOIs
Publication statusPublished - Mar 2018

Keywords

  • Boundary conditions
  • Finite-element method (FEM)
  • Insulated gate bipolar transistors (IGBTs)
  • Power converters
  • Reliability
  • Thermal modeling
  • power converters
  • thermal modeling
  • reliability
  • insulated gate bipolar transistors (IGBTs)
  • finite-element method (FEM)

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