A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs

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Abstract

The demand for highly reliable SiC MOSFETs is growing in the field applications, especially considering the short-circuit conditions. With the development of faster protection, short-circuit faults may occur many times within its expected service life, which only causes short-circuit degradation, rather than destructive failure. Based on finite element method simulation and experimental waveforms, this paper investigates the thermal and mechanical behavior of SiC MOSFET during short-circuit conditions, aiming to propose a package-level strategy to mitigate this short-circuit degradation and the results indicate that the front package design with sintered copper foil could be an effective approach.
Original languageEnglish
Title of host publicationIEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2020
Number of pages4
PublisherIEEE
Publication date2020
Pages1-4
Article number9360256
ISBN (Print)978-1-7281-5956-0
ISBN (Electronic)978-1-7281-5955-3
DOIs
Publication statusPublished - 2020
Event2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia -
Duration: 23 Sep 202025 Sep 2020
http://www.wipda-asia2020.org/

Conference

Conference2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Period23/09/202025/09/2020
Internet address

Keywords

  • Silicon Carbide (SiC)
  • package
  • power MOSFET
  • reliability
  • short circuit
  • simulation

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