A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs

He Du; Francesco Iannuzzo

doi:10.1109/WiPDAAsia49671.2020.9360256

A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

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Abstract

The demand for highly reliable SiC MOSFETs is growing in the field applications, especially considering the short-circuit conditions. With the development of faster protection, short-circuit faults may occur many times within its expected service life, which only causes short-circuit degradation, rather than destructive failure. Based on finite element method simulation and experimental waveforms, this paper investigates the thermal and mechanical behavior of SiC MOSFET during short-circuit conditions, aiming to propose a package-level strategy to mitigate this short-circuit degradation and the results indicate that the front package design with sintered copper foil could be an effective approach.

Original language	English
Title of host publication	IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2020
Number of pages	4
Publisher	IEEE
Publication date	2020
Pages	1-4
Article number	9360256
ISBN (Print)	978-1-7281-5956-0
ISBN (Electronic)	978-1-7281-5955-3
DOIs	https://doi.org/10.1109/WiPDAAsia49671.2020.9360256
Publication status	Published - 2020
Event	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia - Duration: 23 Sept 2020 → 25 Sept 2020 http://www.wipda-asia2020.org/

Conference

Conference	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Period	23/09/2020 → 25/09/2020
Internet address	http://www.wipda-asia2020.org/

Keywords

Silicon Carbide (SiC)
package
power MOSFET
reliability
short circuit
simulation

Access to Document

10.1109/WiPDAAsia49671.2020.9360256

HDU_WiPDA_Asia_2020Accepted author manuscript, 1.34 MB

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Cite this

@inproceedings{0782e1832d9b4cc4a8db2c8e40d8d67a,

title = "A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs",

abstract = "The demand for highly reliable SiC MOSFETs is growing in the field applications, especially considering the short-circuit conditions. With the development of faster protection, short-circuit faults may occur many times within its expected service life, which only causes short-circuit degradation, rather than destructive failure. Based on finite element method simulation and experimental waveforms, this paper investigates the thermal and mechanical behavior of SiC MOSFET during short-circuit conditions, aiming to propose a package-level strategy to mitigate this short-circuit degradation and the results indicate that the front package design with sintered copper foil could be an effective approach.",

keywords = "Silicon Carbide (SiC), package, power MOSFET, reliability, short circuit, simulation",

author = "He Du and Francesco Iannuzzo",

year = "2020",

doi = "10.1109/WiPDAAsia49671.2020.9360256",

language = "English",

isbn = "978-1-7281-5956-0",

pages = "1--4",

booktitle = "IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2020",

publisher = "IEEE",

address = "United States",

note = "2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia ; Conference date: 23-09-2020 Through 25-09-2020",

url = "http://www.wipda-asia2020.org/",

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T1 - A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs

AU - Du, He

AU - Iannuzzo, Francesco

PY - 2020

Y1 - 2020

N2 - The demand for highly reliable SiC MOSFETs is growing in the field applications, especially considering the short-circuit conditions. With the development of faster protection, short-circuit faults may occur many times within its expected service life, which only causes short-circuit degradation, rather than destructive failure. Based on finite element method simulation and experimental waveforms, this paper investigates the thermal and mechanical behavior of SiC MOSFET during short-circuit conditions, aiming to propose a package-level strategy to mitigate this short-circuit degradation and the results indicate that the front package design with sintered copper foil could be an effective approach.

AB - The demand for highly reliable SiC MOSFETs is growing in the field applications, especially considering the short-circuit conditions. With the development of faster protection, short-circuit faults may occur many times within its expected service life, which only causes short-circuit degradation, rather than destructive failure. Based on finite element method simulation and experimental waveforms, this paper investigates the thermal and mechanical behavior of SiC MOSFET during short-circuit conditions, aiming to propose a package-level strategy to mitigate this short-circuit degradation and the results indicate that the front package design with sintered copper foil could be an effective approach.

KW - Silicon Carbide (SiC)

KW - package

KW - power MOSFET

KW - reliability

KW - short circuit

KW - simulation

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U2 - 10.1109/WiPDAAsia49671.2020.9360256

DO - 10.1109/WiPDAAsia49671.2020.9360256

M3 - Article in proceeding

SN - 978-1-7281-5956-0

SP - 1

EP - 4

BT - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2020

PB - IEEE

T2 - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Y2 - 23 September 2020 through 25 September 2020

ER -

A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs

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Keywords

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Impact of Short-Circuit Events on the Remaining Useful Life of SiC MOSFETs and Mitigation Strategy

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