Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application

Yingzhou Peng; Kaiqi Chu; Shuji Mu; Hu Cao; Huai Wang

doi:10.1109/TPEL.2021.3130209

Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application

Yingzhou Peng, Kaiqi Chu, Shuji Mu, Hu Cao, Huai Wang

Research output: Contribution to journal › Letter › peer-review

6 Citations (Scopus)

169 Downloads (Pure)

Abstract

This letter proposes a novel compensation method to eliminate the impact of parasitic inductances on the measurement accuracy of on-state voltage of power semiconductor devices in operating converters. It is an online and noninvasive method by measuring the output current of inverter and on-state voltage of power device only. The impact of parasitic inductances and its compensation are verified experimentally through a traction inverter system.

Original language	English
Journal	I E E E Transactions on Power Electronics
Volume	37
Issue number	5
Pages (from-to)	4937-4941
Number of pages	5
ISSN	0885-8993
DOIs	https://doi.org/10.1109/TPEL.2021.3130209
Publication status	Published - 1 May 2022

Keywords

Current measurement
Index terms-Power semiconductor
Insulated gate bipolar transistors
Inverters
Semiconductor device measurement
Switches
Temperature measurement
Voltage measurement
compensation
on-state voltage
parasitic inductance

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title = "Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application",

abstract = "This letter proposes a novel compensation method to eliminate the impact of parasitic inductances on the measurement accuracy of on-state voltage of power semiconductor devices in operating converters. It is an online and noninvasive method by measuring the output current of inverter and on-state voltage of power device only. The impact of parasitic inductances and its compensation are verified experimentally through a traction inverter system.",

keywords = "Current measurement, Index terms-Power semiconductor, Insulated gate bipolar transistors, Inverters, Semiconductor device measurement, Switches, Temperature measurement, Voltage measurement, compensation, on-state voltage, parasitic inductance",

author = "Yingzhou Peng and Kaiqi Chu and Shuji Mu and Hu Cao and Huai Wang",

year = "2022",

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doi = "10.1109/TPEL.2021.3130209",

language = "English",

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journal = "I E E E Transactions on Power Electronics",

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TY - JOUR

T1 - Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application

AU - Peng, Yingzhou

AU - Chu, Kaiqi

AU - Mu, Shuji

AU - Cao, Hu

AU - Wang, Huai

PY - 2022/5/1

Y1 - 2022/5/1

N2 - This letter proposes a novel compensation method to eliminate the impact of parasitic inductances on the measurement accuracy of on-state voltage of power semiconductor devices in operating converters. It is an online and noninvasive method by measuring the output current of inverter and on-state voltage of power device only. The impact of parasitic inductances and its compensation are verified experimentally through a traction inverter system.

AB - This letter proposes a novel compensation method to eliminate the impact of parasitic inductances on the measurement accuracy of on-state voltage of power semiconductor devices in operating converters. It is an online and noninvasive method by measuring the output current of inverter and on-state voltage of power device only. The impact of parasitic inductances and its compensation are verified experimentally through a traction inverter system.

KW - Current measurement

KW - Index terms-Power semiconductor

KW - Insulated gate bipolar transistors

KW - Inverters

KW - Semiconductor device measurement

KW - Switches

KW - Temperature measurement

KW - Voltage measurement

KW - compensation

KW - on-state voltage

KW - parasitic inductance

UR - http://www.scopus.com/inward/record.url?scp=85120081376&partnerID=8YFLogxK

U2 - 10.1109/TPEL.2021.3130209

DO - 10.1109/TPEL.2021.3130209

M3 - Letter

SN - 0885-8993

VL - 37

SP - 4937

EP - 4941

JO - I E E E Transactions on Power Electronics

JF - I E E E Transactions on Power Electronics

IS - 5

ER -

Parasitic Effect Compensation Method for IGBT ON-State Voltage Measurement in Traction Inverter Application

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