A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Rui Wu, Huai Wang, Kristian Bonderup Pedersen, Ke Ma, Pramod Ghimire, Francesco Iannuzzo, Frede Blaabjerg

Research output: Contribution to journalJournal articleResearchpeer-review

46 Citations (Scopus)

Abstract

A basic challenge in the IGBT transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of FEM thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.
Original languageEnglish
JournalI E E E Transactions on Industry Applications
Volume52
Issue number4
Pages (from-to)3306 - 3314
Number of pages9
ISSN0093-9994
DOIs
Publication statusPublished - Jul 2016

Keywords

  • Temperature measurement
  • Insulated gate bipolar transistors (IGBTs)
  • Modeling
  • Power semiconductor devices
  • Semiconductor device reliability

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