A basic challenge in the IGBT transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of FEM thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.
- Temperature measurement
- Insulated gate bipolar transistors (IGBTs)
- Power semiconductor devices
- Semiconductor device reliability