A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Rui Wu, Huai Wang, Ke Ma, Pramod Ghimire, Francesco Iannuzzo, Frede Blaabjerg

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

23 Citations (Scopus)
2049 Downloads (Pure)

Abstract

Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conductivity and heat capacity of materials are temperature dependent. This paper proposes a Cauer thermal model for a 1700 V/1000 A IGBT module with temperature-dependent thermal resistances and thermal capacitances. The temperature effect is investigated by Finite Element Method (FEM) simulation based on the geometry and material information of the IGBT module. The developed model is ready for circuit-level simulation to achieve an improved accuracy of the estimation on IGBT junction temperature and its relevant reliability aspect performance. A test bench is built up with an ultra-fast infrared (IR) camera to validate the proposed thermal impedance model.
Original languageEnglish
Title of host publicationProceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE)
Number of pages8
PublisherIEEE Press
Publication dateSept 2014
Pages2901-2908
ISBN (Print)978-1-4799-5776-7
DOIs
Publication statusPublished - Sept 2014
Event2014 IEEE Energy Conversion Congress and Exposition (ECCE) - Pittsburgh, Pittsburgh, United States
Duration: 14 Sept 201418 Sept 2014

Conference

Conference2014 IEEE Energy Conversion Congress and Exposition (ECCE)
LocationPittsburgh
Country/TerritoryUnited States
CityPittsburgh
Period14/09/201418/09/2014

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