A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

Mengxing Chen; Huai Wang; Frede Blaabjerg; Xiongfei Wang; Donghua Pan

doi:10.1109/SPEC.2018.8636024

A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

Mengxing Chen, Huai Wang, Frede Blaabjerg, Xiongfei Wang, Donghua Pan

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

11 Citations (Scopus)

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Abstract

The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.

Original language	English
Title of host publication	Proceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018)
Number of pages	7
Publisher	IEEE Press
Publication date	Dec 2018
Pages	1-7
ISBN (Print)	978-1-5386-8258-6
ISBN (Electronic)	978-1-5386-8257-9
DOIs	https://doi.org/10.1109/SPEC.2018.8636024
Publication status	Published - Dec 2018
Event	The 4th IEEE Southern Power Electronics Conference, SPEC 2018 - Nanyang Technological University, Singapore Duration: 10 Dec 2018 → 13 Dec 2018

Conference

Conference	The 4th IEEE Southern Power Electronics Conference, SPEC 2018
Location	Nanyang Technological University
Country/Territory	Singapore
Period	10/12/2018 → 13/12/2018

Keywords

silicon carbide power device
temperature-dependent thermal model
thermal coupling effect
finite element method
RC lumped thermal model

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10.1109/SPEC.2018.8636024

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Cite this

@inproceedings{3173ed918c9c429b9be0d1a49e9c69c6,

title = "A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment",

abstract = "The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.",

keywords = "silicon carbide power device, temperature-dependent thermal model, thermal coupling effect, finite element method, RC lumped thermal model",

author = "Mengxing Chen and Huai Wang and Frede Blaabjerg and Xiongfei Wang and Donghua Pan",

year = "2018",

month = dec,

doi = "10.1109/SPEC.2018.8636024",

language = "English",

isbn = "978-1-5386-8258-6",

pages = "1--7",

booktitle = "Proceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018)",

publisher = "IEEE Press",

note = "The 4th IEEE Southern Power Electronics Conference, SPEC 2018, SPEC 2018 ; Conference date: 10-12-2018 Through 13-12-2018",

}

Chen, M, Wang, H , Blaabjerg, F , Wang, X & Pan, D 2018, A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment. in Proceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018). IEEE Press, pp. 1-7, The 4th IEEE Southern Power Electronics Conference, SPEC 2018, Singapore, 10/12/2018. https://doi.org/10.1109/SPEC.2018.8636024

A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment. / Chen, Mengxing; Wang, Huai ; Blaabjerg, Frede et al.
Proceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018). IEEE Press, 2018. p. 1-7.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

AU - Chen, Mengxing

AU - Wang, Huai

AU - Blaabjerg, Frede

AU - Wang, Xiongfei

AU - Pan, Donghua

PY - 2018/12

Y1 - 2018/12

N2 - The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.

AB - The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.

KW - silicon carbide power device

KW - temperature-dependent thermal model

KW - thermal coupling effect

KW - finite element method

KW - RC lumped thermal model

UR - https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8636024

U2 - 10.1109/SPEC.2018.8636024

DO - 10.1109/SPEC.2018.8636024

M3 - Article in proceeding

SN - 978-1-5386-8258-6

SP - 1

EP - 7

BT - Proceedings of the IEEE 4th Southern Power Electronics Conference (SPEC 2018)

PB - IEEE Press

T2 - The 4th IEEE Southern Power Electronics Conference, SPEC 2018

Y2 - 10 December 2018 through 13 December 2018

ER -

A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Highly Efficient and Reliable SiC based Power Electronic Systems (HER-SiC)

Center Of Reliable Power Electronics (CORPE)

IEEE SPEC 2018 Best Paper Award

Cite this

A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

Highly Efficient and Reliable SiC based Power Electronic Systems (HER-SiC)

Center Of Reliable Power Electronics (CORPE)

Prizes

IEEE SPEC 2018 Best Paper Award

Cite this