Abstract
The Ion Electron Emission Microscope (IEEM) of the SIRAD irradiation facility at LNL (Legnaro, Italy) has been used to perform an Ion Beam Induced Charge Collection (IBICC) type experiment irradiating a power MOSFET device with 223 MeV 79Br ions. The ion-induced drain current pulse signals at different bias conditions were correlated with the ion impacts reconstructed by the IEEM to disentangle, with micrometric resolution, regions of the device with different sensitivity to the impinging ions.
Original language | English |
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Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 273 |
Pages (from-to) | 234-236 |
Number of pages | 3 |
ISSN | 0168-583X |
DOIs | |
Publication status | Published - 15 Feb 2012 |
Externally published | Yes |
Event | 20th International Conference on Ion Beam Analysis - Itapema, Brazil Duration: 10 Apr 2011 → 15 Apr 2011 |
Conference
Conference | 20th International Conference on Ion Beam Analysis |
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Country/Territory | Brazil |
City | Itapema |
Period | 10/04/2011 → 15/04/2011 |
Keywords
- IBICC
- Ion Electron Emission Microscopy
- MOSFET