Accurate Temperature-Dependent IGBT Model for Predicting Commutation Voltage Overshoot in MW-level Power Converters

Ariya Sangwongwanich; Francesco Iannuzzo; Rui Wu; Morten Hygum; Frede Blaabjerg

doi:10.1109/ECCE44975.2020.9236305

Accurate Temperature-Dependent IGBT Model for Predicting Commutation Voltage Overshoot in MW-level Power Converters

Ariya Sangwongwanich, Francesco Iannuzzo, Rui Wu, Morten Hygum, Frede Blaabjerg

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

1 Citation (Scopus)

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Abstract

Insulated-Gate Bipolar Transistor (IGBT) commutation voltage overshoot is a key design consideration for power stacks, especially in high-power applications. Conventionally, several double-pulse tests are required to map the over-voltage stress on the IGBT under different operating conditions, e.g., current loading and temperature, which is time- and resource-consuming. Thus, this paper proposes a physics-based IGBT model, which can be used for predicting the commutation voltage overshoot for MW-level power converters through simulation. The proposed IGBT model is based on a lumped-charge approach, where the temperature-dependent behavior of the IGBT is taken into consideration. A step-by-step model parameters identification process is also provided. The accuracy of the proposed IGBT model has been validated by comparing the predicted results with the experimental results under various operating conditions and achieving an error well below 2 %.

Original language	English
Title of host publication	Proceeding of 2020 IEEE Energy Conversion Congress and Exposition (ECCE)
Number of pages	7
Publisher	IEEE Press
Publication date	Oct 2020
Pages	3449-3455
Article number	9236305
ISBN (Print)	978-1-7281-5827-3
ISBN (Electronic)	978-1-7281-5826-6
DOIs	https://doi.org/10.1109/ECCE44975.2020.9236305
Publication status	Published - Oct 2020
Event	IEEE Energy Conversion Congress and Exposition ECCE,2020 - Duration: 1 Sept 2020 → …

Conference

Conference	IEEE Energy Conversion Congress and Exposition ECCE,2020
Period	01/09/2020 → …

Series	IEEE Energy Conversion Congress and Exposition
ISSN	2329-3721

Keywords

Insulated-gate bipolar transistor (IGBT)
lumped-charge model
physical model
robustness
temperature

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10.1109/ECCE44975.2020.9236305

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Cite this

@inproceedings{9ff4cbb83d8a4e75b28c495427f999c0,

title = "Accurate Temperature-Dependent IGBT Model for Predicting Commutation Voltage Overshoot in MW-level Power Converters",

abstract = "Insulated-Gate Bipolar Transistor (IGBT) commutation voltage overshoot is a key design consideration for power stacks, especially in high-power applications. Conventionally, several double-pulse tests are required to map the over-voltage stress on the IGBT under different operating conditions, e.g., current loading and temperature, which is time- and resource-consuming. Thus, this paper proposes a physics-based IGBT model, which can be used for predicting the commutation voltage overshoot for MW-level power converters through simulation. The proposed IGBT model is based on a lumped-charge approach, where the temperature-dependent behavior of the IGBT is taken into consideration. A step-by-step model parameters identification process is also provided. The accuracy of the proposed IGBT model has been validated by comparing the predicted results with the experimental results under various operating conditions and achieving an error well below 2 %.",

keywords = "Insulated-gate bipolar transistor (IGBT), lumped-charge model, physical model, robustness, temperature",

author = "Ariya Sangwongwanich and Francesco Iannuzzo and Rui Wu and Morten Hygum and Frede Blaabjerg",

year = "2020",

month = oct,

doi = "10.1109/ECCE44975.2020.9236305",

language = "English",

isbn = "978-1-7281-5827-3",

series = "IEEE Energy Conversion Congress and Exposition",

pages = "3449--3455",

booktitle = "Proceeding of 2020 IEEE Energy Conversion Congress and Exposition (ECCE)",

publisher = "IEEE Press",

note = "IEEE Energy Conversion Congress and Exposition ECCE,2020 ; Conference date: 01-09-2020",

}

Sangwongwanich, A , Iannuzzo, F, Wu, R, Hygum, M & Blaabjerg, F 2020, Accurate Temperature-Dependent IGBT Model for Predicting Commutation Voltage Overshoot in MW-level Power Converters. in Proceeding of 2020 IEEE Energy Conversion Congress and Exposition (ECCE)., 9236305, IEEE Press, IEEE Energy Conversion Congress and Exposition, pp. 3449-3455, IEEE Energy Conversion Congress and Exposition ECCE,2020, 01/09/2020. https://doi.org/10.1109/ECCE44975.2020.9236305

Accurate Temperature-Dependent IGBT Model for Predicting Commutation Voltage Overshoot in MW-level Power Converters. / Sangwongwanich, Ariya ; Iannuzzo, Francesco; Wu, Rui et al.
Proceeding of 2020 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2020. p. 3449-3455 9236305 (IEEE Energy Conversion Congress and Exposition).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Accurate Temperature-Dependent IGBT Model for Predicting Commutation Voltage Overshoot in MW-level Power Converters

AU - Sangwongwanich, Ariya

AU - Iannuzzo, Francesco

AU - Wu, Rui

AU - Hygum, Morten

AU - Blaabjerg, Frede

PY - 2020/10

Y1 - 2020/10

N2 - Insulated-Gate Bipolar Transistor (IGBT) commutation voltage overshoot is a key design consideration for power stacks, especially in high-power applications. Conventionally, several double-pulse tests are required to map the over-voltage stress on the IGBT under different operating conditions, e.g., current loading and temperature, which is time- and resource-consuming. Thus, this paper proposes a physics-based IGBT model, which can be used for predicting the commutation voltage overshoot for MW-level power converters through simulation. The proposed IGBT model is based on a lumped-charge approach, where the temperature-dependent behavior of the IGBT is taken into consideration. A step-by-step model parameters identification process is also provided. The accuracy of the proposed IGBT model has been validated by comparing the predicted results with the experimental results under various operating conditions and achieving an error well below 2 %.

AB - Insulated-Gate Bipolar Transistor (IGBT) commutation voltage overshoot is a key design consideration for power stacks, especially in high-power applications. Conventionally, several double-pulse tests are required to map the over-voltage stress on the IGBT under different operating conditions, e.g., current loading and temperature, which is time- and resource-consuming. Thus, this paper proposes a physics-based IGBT model, which can be used for predicting the commutation voltage overshoot for MW-level power converters through simulation. The proposed IGBT model is based on a lumped-charge approach, where the temperature-dependent behavior of the IGBT is taken into consideration. A step-by-step model parameters identification process is also provided. The accuracy of the proposed IGBT model has been validated by comparing the predicted results with the experimental results under various operating conditions and achieving an error well below 2 %.

KW - Insulated-gate bipolar transistor (IGBT)

KW - lumped-charge model

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ER -

Sangwongwanich A , Iannuzzo F, Wu R, Hygum M, Blaabjerg F. Accurate Temperature-Dependent IGBT Model for Predicting Commutation Voltage Overshoot in MW-level Power Converters. In Proceeding of 2020 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press. 2020. p. 3449-3455. 9236305. (IEEE Energy Conversion Congress and Exposition). doi: 10.1109/ECCE44975.2020.9236305

Accurate Temperature-Dependent IGBT Model for Predicting Commutation Voltage Overshoot in MW-level Power Converters

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Cite this

Accurate Temperature-Dependent IGBT Model for Predicting Commutation Voltage Overshoot in MW-level Power Converters

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

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APETT: Advanced Power Electronic Technology and Tools

Cite this