Accurate Temperature-Dependent IGBT Model for Predicting Commutation Voltage Overshoot in MW-level Power Converters

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Abstract

Insulated-Gate Bipolar Transistor (IGBT) commutation voltage overshoot is a key design consideration for power stacks, especially in high-power applications. Conventionally, several double-pulse tests are required to map the over-voltage stress on the IGBT under different operating conditions, e.g., current loading and temperature, which is time- and resource-consuming. Thus, this paper proposes a physics-based IGBT model, which can be used for predicting the commutation voltage overshoot for MW-level power converters through simulation. The proposed IGBT model is based on a lumped-charge approach, where the temperature-dependent behavior of the IGBT is taken into consideration. A step-by-step model parameters identification process is also provided. The accuracy of the proposed IGBT model has been validated by comparing the predicted results with the experimental results under various operating conditions and achieving an error well below 2 %.
Original languageEnglish
Title of host publicationProceeding of 2020 IEEE Energy Conversion Congress and Exposition (ECCE)
Number of pages7
PublisherIEEE Press
Publication dateOct 2020
Pages3449-3455
Article number9236305
ISBN (Print)978-1-7281-5827-3
ISBN (Electronic)978-1-7281-5826-6
DOIs
Publication statusPublished - Oct 2020
EventIEEE Energy Conversion Congress and Exposition ECCE,2020 -
Duration: 1 Sept 2020 → …

Conference

ConferenceIEEE Energy Conversion Congress and Exposition ECCE,2020
Period01/09/2020 → …
SeriesIEEE Energy Conversion Congress and Exposition
ISSN2329-3721

Keywords

  • Insulated-gate bipolar transistor (IGBT)
  • lumped-charge model
  • physical model
  • robustness
  • temperature

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