AlGaN/GaN Heterostructures in High Electron Mobility Transistors

Piotr Caban, Ryan Thorpe, Leonard Feldman, Kjeld Pedersen, Vladimir Popok

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearch

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Abstract

AlGaN/GaN heterostructures are of high research and industrial interest for the production of high electron mobility transistors (HEMT) utilizing the two-dimensional electron gas (2DEG) induced at the interface due to polarization effects. In the current work, the effect of AlGaN thickness on 2DEG formation is under discussion. In particular, ultrathin layers of AlGaN (between 2-12 nm thick) are grown on top of GaN. Composition of these layers is studied and variations of surface potential are mapped using Kelvin probe force microscopy (KPFM) to see the evolution of the 2DEG formation in relation to layer thickness and stoichiometry. The obtained results allow concluding about critical thickness of AlGaN layer for the formation of continuous 2DEG at the AlGaN/GaN interface.
Original languageEnglish
Title of host publicationProceedings of VIII International Conference on Materials and Structures of Modern Electronics
EditorsV.B. Odzaev
Number of pages4
Place of PublicationMinsk: BSU
Publication dateOct 2018
Pages5-8
ISBN (Print)978-985-566-671-5
Publication statusPublished - Oct 2018
EventMaterials and Structures of Modern Electronics - , Belarus
Duration: 10 Oct 201812 Oct 2018

Conference

ConferenceMaterials and Structures of Modern Electronics
CountryBelarus
Period10/10/201812/10/2018

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high electron mobility transistors
electron gas
stoichiometry
microscopy
probes
polarization

Cite this

Caban, P., Thorpe, R., Feldman, L., Pedersen, K., & Popok, V. (2018). AlGaN/GaN Heterostructures in High Electron Mobility Transistors. In V. B. Odzaev (Ed.), Proceedings of VIII International Conference on Materials and Structures of Modern Electronics (pp. 5-8). Minsk: BSU.
Caban, Piotr ; Thorpe, Ryan ; Feldman, Leonard ; Pedersen, Kjeld ; Popok, Vladimir. / AlGaN/GaN Heterostructures in High Electron Mobility Transistors. Proceedings of VIII International Conference on Materials and Structures of Modern Electronics. editor / V.B. Odzaev. Minsk: BSU, 2018. pp. 5-8
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Caban, P, Thorpe, R, Feldman, L, Pedersen, K & Popok, V 2018, AlGaN/GaN Heterostructures in High Electron Mobility Transistors. in VB Odzaev (ed.), Proceedings of VIII International Conference on Materials and Structures of Modern Electronics. Minsk: BSU, pp. 5-8, Materials and Structures of Modern Electronics, Belarus, 10/10/2018.

AlGaN/GaN Heterostructures in High Electron Mobility Transistors. / Caban, Piotr; Thorpe, Ryan; Feldman, Leonard; Pedersen, Kjeld; Popok, Vladimir.

Proceedings of VIII International Conference on Materials and Structures of Modern Electronics. ed. / V.B. Odzaev. Minsk: BSU, 2018. p. 5-8.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearch

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N2 - AlGaN/GaN heterostructures are of high research and industrial interest for the production of high electron mobility transistors (HEMT) utilizing the two-dimensional electron gas (2DEG) induced at the interface due to polarization effects. In the current work, the effect of AlGaN thickness on 2DEG formation is under discussion. In particular, ultrathin layers of AlGaN (between 2-12 nm thick) are grown on top of GaN. Composition of these layers is studied and variations of surface potential are mapped using Kelvin probe force microscopy (KPFM) to see the evolution of the 2DEG formation in relation to layer thickness and stoichiometry. The obtained results allow concluding about critical thickness of AlGaN layer for the formation of continuous 2DEG at the AlGaN/GaN interface.

AB - AlGaN/GaN heterostructures are of high research and industrial interest for the production of high electron mobility transistors (HEMT) utilizing the two-dimensional electron gas (2DEG) induced at the interface due to polarization effects. In the current work, the effect of AlGaN thickness on 2DEG formation is under discussion. In particular, ultrathin layers of AlGaN (between 2-12 nm thick) are grown on top of GaN. Composition of these layers is studied and variations of surface potential are mapped using Kelvin probe force microscopy (KPFM) to see the evolution of the 2DEG formation in relation to layer thickness and stoichiometry. The obtained results allow concluding about critical thickness of AlGaN layer for the formation of continuous 2DEG at the AlGaN/GaN interface.

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Caban P, Thorpe R, Feldman L, Pedersen K, Popok V. AlGaN/GaN Heterostructures in High Electron Mobility Transistors. In Odzaev VB, editor, Proceedings of VIII International Conference on Materials and Structures of Modern Electronics. Minsk: BSU. 2018. p. 5-8