This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.
|Title of host publication||2018 IEEE Applied Power Electronics Conference and Exposition (APEC)|
|Number of pages||6|
|Publication date||Mar 2018|
|Publication status||Published - Mar 2018|
- GaN eHEMTs
- Power loss model