Abstract
This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.
Original language | English |
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Title of host publication | 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) |
Number of pages | 6 |
Publisher | IEEE Press |
Publication date | Mar 2018 |
Pages | 913-918 |
ISBN (Print) | 978-1-5386-1181-4 |
ISBN (Electronic) | 978-1-5386-1180-7 |
DOIs | |
Publication status | Published - Mar 2018 |
Event | 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) - San Antonio, United States Duration: 4 Mar 2018 → 8 Mar 2018 |
Conference
Conference | 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) |
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Country/Territory | United States |
City | San Antonio |
Period | 04/03/2018 → 08/03/2018 |
Keywords
- GaN eHEMTs
- Turn-on
- Power loss model