An analytical turn-on power loss model for 650-V GaN eHEMTs

Yanfeng Shen, Huai Wang, Zhan Shen, Frede Blaabjerg, Zian Qin

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Abstract

This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.
Original languageEnglish
Title of host publication2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages6
PublisherIEEE Press
Publication dateMar 2018
Pages913-918
ISBN (Print)978-1-5386-1181-4
ISBN (Electronic)978-1-5386-1180-7
DOIs
Publication statusPublished - Mar 2018

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Drain current
Transconductance
Analytical models
Capacitance
Electric potential

Keywords

  • GaN eHEMTs
  • Turn-on
  • Power loss model

Cite this

Shen, Y., Wang, H., Shen, Z., Blaabjerg, F., & Qin, Z. (2018). An analytical turn-on power loss model for 650-V GaN eHEMTs. In 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp. 913-918). IEEE Press. https://doi.org/10.1109/APEC.2018.8341123
Shen, Yanfeng ; Wang, Huai ; Shen, Zhan ; Blaabjerg, Frede ; Qin, Zian. / An analytical turn-on power loss model for 650-V GaN eHEMTs. 2018 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, 2018. pp. 913-918
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abstract = "This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.",
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Shen, Y, Wang, H, Shen, Z, Blaabjerg, F & Qin, Z 2018, An analytical turn-on power loss model for 650-V GaN eHEMTs. in 2018 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, pp. 913-918. https://doi.org/10.1109/APEC.2018.8341123

An analytical turn-on power loss model for 650-V GaN eHEMTs. / Shen, Yanfeng; Wang, Huai; Shen, Zhan; Blaabjerg, Frede; Qin, Zian.

2018 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, 2018. p. 913-918.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

TY - GEN

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N2 - This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.

AB - This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.

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Shen Y, Wang H, Shen Z, Blaabjerg F, Qin Z. An analytical turn-on power loss model for 650-V GaN eHEMTs. In 2018 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press. 2018. p. 913-918 https://doi.org/10.1109/APEC.2018.8341123